Free-Standing Si and Ge, and Ge/Si Core-Shell Semiconductor Nanowires

• Authors: H. Peelaers , B. Partoens , F. Peeters
• Languages of publication: EN

Abstracts

EN

The properties of free-standing silicon and germanium nanowires oriented along the [110] direction are studied using different first principles methods. We show the corrections due to quasi-particles to the band structures obtained using the local-density approximation. The formation energies of B and P doped nanowires are calculated, both in the absence and presence of dangling bond defects and we link these to experimental results. Furthermore, we report on the phonon properties of pure Si and Ge nanowires, as well as Ge/Si core-shell nanowires, and discuss the differences between them.

Keywords

EN

61.46.Km; 61.72.uf; 62.23.Hj; 63.22.Gh

Discipline

• 61.46.Km: Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
• 62.23.Hj: Nanowires
• 61.72.uf: Ge and Si
• 63.22.Gh: Nanotubes and nanowires

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 2
• Pages: 294-298

Dates

published

2012-08

Contributors

author

H. Peelaers

• Universiteit Antwerpen, Departement Fysica, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
• Materials Department, University of California, Santa Barbara, CA 93106-5050, USA

author

B. Partoens

• Universiteit Antwerpen, Departement Fysica, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

author

F. Peeters

• Universiteit Antwerpen, Departement Fysica, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

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Identifiers

DOI

10.12693/APhysPolA.122.294