Preparation, Study and Nanoscale Growth of Indium Oxide Thin Films

• Authors: A. Bagheri Khatibani , S. Rozati , Z. Bargbidi
• Languages of publication: EN

Abstracts

EN

Indium oxide (In_2O_3) thin films were deposited on glass substrate by varying substrate temperature in the range of 400-600C using the spray pyrolysis technique. In this research, physical properties of indium oxide thin films were studied and then nanocrystalline sizes at different substrate temperature were deeply compared and investigated. All films were characterized at room temperature using X-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence, the Hall effect and UV-visible spectrophotometer. The optimal substrate temperature to obtain films of high crystallographic quality was 575°C, for this temperature, the electrical resistivity was in the order of ρ=0.147 Ω cm. For comparing optical transmittance and electrical conductivity the best figure of merit of the films was achieved at 575C.

Keywords

EN

81.07.-b; 78.66.-w

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 122
• Issue: 1
• Pages: 220-223

Dates

published

2012-07

received

2011-04-20

(unknown)

2012-01-15

(unknown)

2012-02-21

Contributors

author

A. Bagheri Khatibani

• Islamic Azad University, Lahijan Branch, P.O. Box 1616, Lahijan, Iran

author

S. Rozati

• Physics Department, University of Guilan, Rasht 41335, Iran

author

Z. Bargbidi

• Physics Department, University of Guilan, Rasht 41335, Iran

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Identifiers

DOI

10.12693/APhysPolA.122.220