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2012 | 122 | 1 | 197-201
Article title

Energy Band and Absorption Coefficient of Quantum Dots in a Well Structure

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EN
Abstracts
EN
Building on the effective-mass envelope function theory, this paper focuses on the study of the energy band and the absorption coefficient of InAs/In_{x}Ga_{1 - x}As quantum dots in a well (DWELL) structure. In contrast to InAs/In_{0.15}Ga_{0.85}As quantum DWELL, the InAs/In_{0.2}Ga_{0.8}As quantum DWELL has lower ground states. With the thickness of In_{0.15}Ga_{0.85}As layer changing from 7 nm to 9 nm and In_{0.2}Ga_{0.8}As layer changing from 9 nm to 12 nm, the calculation shows that their absorption coefficient spectra takes a red shift in the long-wave infrared and far-infrared ranges, respectively. Moreover, when the thickness of the In_{x}Ga_{1 - x}As layer is defined as 9 nm, the absorption coefficient spectra of InAs/In_{0.2}Ga_{0.8}As DWELL shows a obvious red shift comparing with that of InAs/In_{0.15}Ga_{0.85}As DWELL.
Keywords
EN
Year
Volume
122
Issue
1
Pages
197-201
Physical description
Dates
published
2012-07
received
2011-12-18
(unknown)
2012-04-15
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n1p39kz
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