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2012 | 122 | 1 | 170-173
Article title

Electrical Behaviour of Nanostructured Porous Silicon

Content
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Languages of publication
EN
Abstracts
EN
The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared due to I-V measurements and calculation of activation energy. We have also studied the dependence of porous silicon conductivity on fabrication conditions. Also the effect of the temperature on conduction of porous silicon at different frequencies is investigated. At last dependence of capacitance on the temperature was probed at 10^2 - 10^5 Hz frequency range.
Keywords
Year
Volume
122
Issue
1
Pages
170-173
Physical description
Dates
published
2012-07
received
2011-09-27
(unknown)
2012-04-15
References
  • 1. I. Bazrafkan, R.S. Dariani, Physica B 404, 1638 (2009)
  • 2. L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990)
  • 3. A.G. Cullies, L.T. Canham, P.D.J. Calcott, J. Appl. Phys. 82, 909 (1997)
  • 4. R.T. Collins, P.M. Fauchet, M.A. Tischler, Phys. Today 50, 24 (1997)
  • 5. S.H.D. Milani, R.S. Dariani, A. Mortezaaali, V. Daadmehr, K. Robbie, J. Optoelectron. Adv. Mater. 8, 1216 (2006)
  • 6. M. Ben-Chorin, F. Moller, F. Koch, J. Appl. Phys. 77, 4482 (1995)
  • 7. N.J. Pulsford, G.L.J.A. Rikken, Y.A.R.R. Kessener, E.J. Lous, A.H.J. Venhuizen, J. Appl. Phys. 75, 636 (1994)
  • 8. C. Peng, K.D. Hirschman, P.M. Fauchet, J. Appl. Phys. 80, 295 (1996)
  • 9. A.K. Ray, M.F. Mabrook, A.V. Nabok, S. Brown, J. Appl. Phys. 84, 3232 (1998)
  • 10. K.L. Narasimhan, Philos. Mag. B 77, 75 (1998)
  • 11. L.A. Balagurov, S.C. Bayliss, A.F. Orlov, E.A. Petrova, B. Unal, D.G. Yarkin, J. Appl. Phys. 90, 4184 (2001)
  • 12. H. Foll, M. Christophersen, J. Carstensen, Mater. Sci. Eng. R 39, 93 (2002)
  • 13. O. Bisi, S. Ossicini, L. Pavesi, Surf. Sci. Rep. 38, 1126 (2000)
  • 14. X.J. Li, S.J. Chen, C.Y. Feng, Sensors Actuators B: Chem. 123, 461 (2007)
  • 15. M. Thust, M.J. Schoning, S. Frohnhoff, R. Arens-Fischer, P. Kordos, H. Luth, Measur. Sci. Technol. 7, 26 (1996)
  • 16. M.J. Schoning, F. Ronkel, M. Thust, J.W. Schultze, P. Kordos, H. Luth, Electrochim. Acta 42, 3185 (1997)
  • 17. M.J. Schoning, U. Malkoc, M. Thust, A. Steffen, P. Kordos, H. Luth, in: Technical Digest of 7th IMCS Conf., Beijing (China), Beijing 1998, p. 885
  • 18. M.J. Schoning, A. Kurowski, M. Thust, P. Kordos, J.W. Schultze, H. Luth, Sensors Actuators B 64, 59 (2000)
  • 19. A. Porcher, B. Remaki, C. Populaire, D. Barbier, Phys. Stat. Solidi A 204, 1653 (2007)
  • 20. L.T. Canham, Properties of Porous Silicon, INSPEC, London 1997
  • 21. M. Ben-Chorin, F. Möller, F. Koch, W. Schirmacher, M. Eberhard, Phys. Rev. B 4, 2199 (1995)
  • 22. B. Remaki, S. Perichon, V. Lysenko, D. Barbier, Mater. Res. Soc. Symp. Proc. 638, F3.2.1 (2000)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n1p34kz
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