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2012 | 122 | 1 | 152-155
Article title

Photovoltaic Effect and Space Charge Limited Current Analysis in TlGaTe_2 Crystals

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EN
Abstracts
EN
Anisotropic space charge limited current density analysis and photovoltaic effect in TlGaTe_2 single crystals has been investigated. It is shown that, above 330 K, the crystal exhibits intrinsic and extrinsic type of conductivity along (c-axis) and perpendicular (a-axis) to the crystal's axis, respectively. The current density (J) is found to be space charge limited. It is proportional to the square and three halves power of voltage (V) along the a- and c-axis, respectively. Along the a-axis and at sufficiently low electric field values, the activation energy of the current density is found to depend on the one half power of electric field. At high electric fields, the activation energy is field invariant. This behavior is found to be due to the Pool-Frenkel effect and due to a trap set located at 0.26 eV, respectively. Along the c-axis the crystal is observed to operate under the Child-Langmuir space charge limited regime. TlGaTe_2 crystals are found to exhibit photovoltaic properties. The open circuit photovoltage is recorded as a function of illumination intensity at room temperature.
Keywords
EN
Year
Volume
122
Issue
1
Pages
152-155
Physical description
Dates
published
2012-07
received
2010-12-08
References
  • 1. D. Malterre, B. Dardel, M. Grioni, I. Weibel, Y. Baer, J. Phys. (France) IV 3, 97 (1993)
  • 2. R.M. Sardarli, O.A. Samedov, A.P. Abdullayev, E.K. Huseynov, F.T. Salmanov, G.R. Safarova, Semiconductors 44, 585 (2010)
  • 3. E.M. Gojaev, K.D. Gyul'mamedov, A.R. Ibragimova, A.A. Movsumov, Inorg. Mater. 46, 353 (2010)
  • 4. K. Mimura, T. Ishizu, K. Yamamoto, J. Takasu, Y. Yonehira, K. Wakita, N. Mamedov, Y. Taguchi, K. Ichikawa, K. Yan, E. Ikenaga, K. Kobayashi, Phys. Status Solidi C 6, 993 (2009)
  • 5. M.N. Nassary, S.A. Hussein, A.T. Nagat, Cryst. Res. Technol. 29, 869 (1994)
  • 6. M.P. Hanias, A. Anagnostopoulos, Phys. Rev. B 47, 4261 (1993)
  • 7. M.M. Kurbanov, Inorg. Mater. 41, 1277 (2005)
  • 8. K. Okazaki, K. Tanaka, J. Matsuno, A. Fujimori, L.F. Mattheiss, S. Iida, E. Kerimova, N. Mamedov, Phys. Rev. B 64, 045210 (2001)
  • 9. A.F. Qasrawi, N.M. Gasanly, J. Phys., Condens. Matter 21, 235802 (2009)
  • 10. A.F. Qasrawi, N.M. Gasanly, Phys. Status Solidi A 206, 2555 (2009)
  • 11. M. Parlak, C. Ercelebi, I. Gunal, H. Ozkan, N.M. Gasanly, Cryst. Res. Technol. 31, 673 (1996)
  • 12. V. Riede, H. Neumann, H. Sobotta, Solid State Commun. 38, 71 (1981)
  • 13. É.M. Godzhaev, G.S. Orudzhev, D.M. Kafarova, Phys. Solid State 46, 833 (2004)
  • 14. A.T. Nagat, G.A. Gamal, S.A. Hussein, Cryst. Res. Technol. 26, 19 (1991)
  • 15. M.A. Lampert, P. Mark, Current Injection in Solids, Academic Press, New York 1970
  • 16. O. Madelung, Semiconductors: Data Handbook, 3rd ed., Springer, Berlin 2004
  • 17. A.F. Qasrawi, N.M. Gasanly, Semicond. Sci. Technol. 19, 505 (2004)
  • 18. S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 2nd ed., Wiley, Hoboken, NJ 2007
  • 19. N.B. Abdallah, P. Degond, A. Yamnahakki, Solid State Electron. 39, 737 (1996)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv122n1p29kz
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