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2012 | 121 | 5-6 | 1246-1249
Article title

Transport Properties of Rippled Graphene

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Languages of publication
EN
Abstracts
EN
It is common to describe graphene as ideally flat plane, however there exists both theoretical and experimental evidence that it is most usual to find it in a rippled state. The ripples can be either induced by the substrate or formed spontaneously in suspended graphene. The lateral size of such features ranges between several and tens of nanometers with the height of up to 1 nm. It has been suggested that the presence of ripples could be one of the factors ultimately limiting mobility of carriers and that it may be also responsible, by introducing an effective gauge field, for the lack of weak localization observed in certain graphene samples. In the present contribution the transport properties of the rippled graphene are studied theoretically starting with the simple case of one-dimensional modulation. Using either single-band or the full sp^3 tight-binding Hamiltonians we compare and discuss the importance of two ripple-related mechanisms of scattering: the variation of interatomic distances and hybridization between π and σ bands of graphene.
Keywords
EN
Year
Volume
121
Issue
5-6
Pages
1246-1249
Physical description
Dates
published
2012-05
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv121n5-6p79kz
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