Intrinsic Spin Hall and Spin Nernst Effects in Single-Layer Graphene: Tight-Binding vs. Effective Model

• Authors: A. Dyrdał , J. Barnaś
• Languages of publication: EN

Abstracts

EN

We calculate topological contributions to the spin Hall and spin Nernst effects due to intrinsic spin-orbit interaction in a single-layer graphene. To describe electronic spectrum of the graphene we have assumed the k·p model as well as the full tight-binding Hamiltonian. The corresponding contributions to the spin Hall and spin Nernst effects have been determined using the linear response theory and Green function formalism.

Keywords

EN

73.43.-f; 72.25.Hg; 73.61.Wp

Discipline

• 73.43.-f: Quantum Hall effects
• 73.61.Wp: Fullerenes and related materials
• 72.25.Hg: Electrical injection of spin polarized carriers

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 5-6
• Pages: 1198-1200

Dates

published

2012-05

Contributors

author

A. Dyrdał

• Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland

author

J. Barnaś

• Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
• Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179 Poznań, Poland

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Identifiers

DOI

10.12693/APhysPolA.121.1198