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2012 | 121 | 5-6 | 1139-1141
Article title

Electrical Resistivity and Electronic Structure of the Tb_{x}Gd_{1-x}Ni_3 System

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Abstracts
EN
In the paper the electric properties and electronic structure of the intermetallic Tb_{x}Gd_{1-x}Ni_3 compounds are presented. The partial replacement of Gd by Tb atoms causes the decrease of the Curie temperature (T_{C}) and the increase of the residual resistivity. According to the Matthiessen rule the scattering mechanisms in ρ(T) have been analyzed. Moreover, the reduced form of the electrical resistivity ρ_{Z} (T - T_{0}) indicates a deviation from the linearity for x > 0.2. This kind of behaviour can be attributed to density of d states near by the Fermi level (E_{F}) which are dominated by Ni 3d states. The valence band spectra as well as the core level lines have been analyzed as the influence of Tb/Gd substitution on the electronic structure.
Keywords
Contributors
  • August Chełkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland
author
  • August Chełkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland
author
  • August Chełkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland
  • August Chełkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv121n5-6p44kz
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