Synchrotron Topographic Studies of Domain Structure in Czochralski Grown Pr_xLa_{1-x}AlO_3 and Pr_xLa_{1-x-y}Mg_yAlO_3 Crystals

• Authors: K. Wieteska , W. Wierzchowski , A. Malinowska , S. Turczyński , M. Lefeld-Sosnowska , D. Pawlak , T. Łukasiewicz , C. Paulmann
• Languages of publication: EN

Abstracts

EN

A domain structure and crystallographic defects in Czochralski grown single crystals of Pr_xLa_{1-x}AlO_3 and Pr_xLa_{1-x-y}Mg_yAlO_3 were characterised with a number of methods including conventional and synchrotron X-ray diffraction topography, and polariscopic micrography. The observed twin domain systems were located perpendicularly to 〈100〉_{pcub} and 〈110〉_{pcub} (pseudocubic) directions. It has been confirmed that the domains are of the same orientation and a twin character as those described in literature for LaAlO_3 and LaGaO_3 crystals. The use of section transmission topography enabled to indicate that the domains are perpendicular to the (100)_{pcub} surface of the samples. The misorientation of lattice in the domains was evaluated from the white beam topographs and a tendency of its increase with increasing concentration of praseodymium was revealed.

Keywords

EN

81.05.-t; 81.10.Dn; 61.72.Ff

Discipline

• 81.10.Dn: Growth from solutions
• 81.05.-t: Specific materials: fabrication, treatment, testing, and analysis(for superconducting materials, see 74.70.-b, and 74.72.-h; for magnetic materials, see 75.50.-y; for optical materials, see 42.70.-a; for dielectric materials, see 77.84.-s; for disperse systems and complex fluids, see 82.70.-y; see also 82.75.-z Molecular sieves, zeolites, clathrates, and other complex solids; for materials properties, see sections 60 and 70)
• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 4
• Pages: 910-914

Dates

published

2012-04

Contributors

author

K. Wieteska

• National Centre for Nuclear Research, A. Sołtana 7, Otwock-Świerk 05-400, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, Warszawa 01-919, Poland

author

A. Malinowska

• Institute of Electronic Materials Technology, Wólczyńska 133, Warszawa 01-919, Poland

author

S. Turczyński

• Institute of Electronic Materials Technology, Wólczyńska 133, Warszawa 01-919, Poland

author

M. Lefeld-Sosnowska

• Warsaw University, Institute of Experimental Physics, Hoża 69, Warszawa 00-681, Poland

author

D. Pawlak

• Institute of Electronic Materials Technology, Wólczyńska 133, Warszawa 01-919, Poland

author

T. Łukasiewicz

• Institute of Electronic Materials Technology, Wólczyńska 133, Warszawa 01-919, Poland

author

C. Paulmann

• HASYLAB at DESY, Notkestrasse 85, D-22607 Hamburg, Germany

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Identifiers

DOI

10.12693/APhysPolA.121.910