Characterisation of the Defect Structure in Gadolinum Orthovanadate Single Crystals Grown by the Czochralski Method

• Authors: E. Wierzbicka , A. Malinowska , K. Wieteska , W. Wierzchowski , M. Lefeld-Sosnowska , M. Świrkowicz , T. Łukasiewicz , C. Paulmann
• Languages of publication: EN

Abstracts

EN

The GdVO_4 single crystals, both undoped and doped with erbium or thulium, were studied by means of X-ray diffraction topographic methods exploring laboratory and synchrotron radiation sources. Variously developed block structure, caused probably by thermal stresses, was revealed. The highest crystallographic perfection was observed in the crystal doped with 4 at.% of thulium, which was free of the grain boundaries in the end part. Contrary to that, the differences in structural perfection between samples cut out from various regions of the crystal and for different kinds of doping, were less distinct in other crystals. The diffraction topographic methods enabled the statement that the misorientation between various blocks is in the range of several arc minutes.

Keywords

EN

61.72.Ff

Discipline

• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 4
• Pages: 906-909

Dates

published

2012-04

Contributors

author

E. Wierzbicka

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01919 Warsaw, Poland

author

A. Malinowska

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01919 Warsaw, Poland

author

K. Wieteska

• National Centre for Nuclear Research, A. Sołtana 7, PL-05400 Otwock-Świerk, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01919 Warsaw, Poland

author

M. Lefeld-Sosnowska

• Institute of Experimental Physics, University of Warsaw, Hoża 69, PL-00681 Warsaw, Poland

author

M. Świrkowicz

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01919 Warsaw, Poland

author

T. Łukasiewicz

• Institute of Electronic Materials Technology, Wólczyńska 133, PL-01919 Warsaw, Poland

author

C. Paulmann

• HASYLAB at DESY, Notkestrasse 85, D-22607 Hamburg, Germany

References

• 1. E.A. Maunders, L.G. DeShaser, J. Opt. Soc. 61, 684 (1971)
• 2. G. Will, W. Schäfer, J. Phys. C (Solid State Phys.) 4, 811 (1971)
• 3. M. Bass, IEE J. Quantum Electr. QE-11, 938 (1975)
• 4. A.I. Zagumennyi, V.G. Ostroumov, I.A. Shcherbakov, T. Jensen, J.P. Meyen, G. Huber, Sov. J. Quantum Electr. 22, 1071 (1992)
• 5. K. Shimamura, S. Uda, V.V. Kochurikhin, T. Taniuchi, T. Fukuda, Jpn. J. Appl. Phys. 35, 1832 (1996)
• 6. S. Erdei, B.M. Jin, F.W. Ainger, B. Kezel, J. Vandlik, A. Suveges, J. Cryst. Growth 172, 466 (1997)
• 7. C.Q. Wang, H.J. Zhang, Y.T. Chow, J.H. Liu, L. Zhu, J.Y. Wang, X.L. Meng, W.A. Gambling, Opt. Laser Technol. 33, 439 (2001)
• 8. H.D. Jiang, H.J. Zhang, J.Y. Wang, H.R. Xia, X.B. Hu, B. Teng, C.Q. Zhang, Opt. Commun. 198, 447 (2001)
• 9. L. Qin, X. Meng, J. Zhang, L. Zhu, H. Zhang, B. Xu, H. Jiang, J. Cryst. Growth 242, 183 (2002)
• 10. T. Shonai, M. Higuchi, K. Kodaira, T. Ogawa, S. Wada, H. Machida, J. Cryst. Growth 241, 159 (2002)
• 11. W. Xiong, S. Lin, Y. Xie, J. Cryst. Growth 263, 353 (2004)
• 12. Y. Yang, B. Yao, B. Chen, C. Wang, Opt. Mater. 29, 1159 (2007)
• 13. S. Lin, W. Xiong, L. Li, Y. Xie, J. Cryst. Growth 270, 133 (2004)
• 14. G. Zhang, H. Tu, Y. Liu, Z. Hu, J. Cryst. Growth 311, 912 (2009)
• 15. V.V. Kochurikhin, K. Shimamura, T. Fukuda, J. Cryst. Growth 151, 393 (1995)
• 16. W. Paszkowicz, P. Romanowski, J. Bąk-Misiuk, W. Wierzchowski, K. Wieteska, W. Graeff, R.J. Iwanowski, M.H. Heinonen, O. Ermakova, H. Dąbkowska, Radiat. Phys. Chem. 80, 1001 (2011)
• 17. S. Zhao, H. Zhang, J. Liu, J. Wang, X. Xu, Z. Zhao, J. Xu, M. Jiang, J. Cystal Growth 279, 146 (2005)
• 18. B.Q. Hu, Y.Z. Zhang, X. Wu, X.L. Chen, J. Cryst. Growth 226, 511 (2001)
• 19. D.E. Eakins, J.B. LeBret, M.G. Norton, D.F. Bahr, J. Cryst. Growth 266, 411 (2004)
• 20. J.B. LeBret, M. Grant Norton, D.F. Bahr, D.P. Field, K.G. Lynn, J. Mater. Sci. 40, 3347 (2005)
• 21. M. Higuchia, T. Shimizua, J. Takahashia, T. Ogawab, Y. Uratac, T. Miurab, S. Wadab, H. Machida, J. Cryst. Growth 283, 100 (2005)
• 22. K. Wieteska, W. Wierzchowski, E. Wierzbicka, A. Malinowska, M. Lefeld-Sosnowska, T. Łukasiewicz, W. Graeff, Acta Phys. Pol. A 114, 455 (2008)
• 23. A. Malinowska, E. Wierzbicka, M. Lefeld-Sosnowska, K. Wieteska, W. Wierzchowski, T. Łukasiewicz, M. Swirkowicz, W. Graeff, Acta Phys. Pol. A 117, 328 (2010)
• 24. A. Karaś, private information (2008)
• 25. D.K. Bowen, B.K. Tanner, High resolution X-ray diffractometry and topography, London: Taylor&Francis Ltd., 221 (1998).
• 26. X.A. Zhu, C.T. Tsai, J. Appl. Phys. 88, 2295 (2000)
• 27. M.A. Moram, M.J. Kappers, F. Massabuau, R.A. Oliver, C.J. Humphreys, J. Appl. Phys. 109, 073509 (2011)

Identifiers

DOI

10.12693/APhysPolA.121.906