Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

• Authors: J. Bak-Misiuk , E. Dynowska , P. Romanowski , A. Misiuk , J. Sadowski , W. Caliebe
• Languages of publication: EN

Abstracts

EN

Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga_{1-x}Mn_xAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs

Keywords

EN

61.05.cp; 75.50.Pp; 81.40.Vw

Discipline

• 81.40.Vw: Pressure treatment(see also 62.50.-p High-pressure effects in solids and liquids; 61.50.Ks Crystallographic aspects of phase transformations; pressure effects; for pressure effects on superconducting transition temperature, see 74.62.Fj)
• 61.05.cp: X-ray diffraction
• 75.50.Pp: Magnetic semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 4
• Pages: 903-905

Dates

published

2012-04

Contributors

author

J. Bak-Misiuk

• Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland

author

E. Dynowska

• Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland

author

P. Romanowski

• Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland

author

A. Misiuk

• Institute of Electron Technology, al. Lotnikow 46, PL-02668 Warsaw, Poland

author

J. Sadowski

• Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland
• MAX-Lab, Lund University, P.O. Box. 118, S-22100 Lund, Sweden

author

W. Caliebe

• HASYLAB at DESY, Notkestr. 85, D-22603 Hamburg, Germany

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Identifiers

DOI

10.12693/APhysPolA.121.903