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2012 | 121 | 4 | 903-905
Article title

Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs

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Abstracts
EN
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of Ga_{1-x}Mn_xAs/GaAs layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
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Contributors
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotnikow 46, PL-02668 Warsaw, Poland
author
  • Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland
  • MAX-Lab, Lund University, P.O. Box. 118, S-22100 Lund, Sweden
author
  • HASYLAB at DESY, Notkestr. 85, D-22603 Hamburg, Germany
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv121n4p209kz
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