Influence of Substrate on Crystallographic Quality of AlGaN/GaN HEMT Structures Grown by Plasma-Assisted MBE

• Authors: A. Wierzbicka , Z. Żytkiewicz , M. Sobańska , K. Kłosek , E. Łusakowska
• Languages of publication: EN

Abstracts

EN

Results of characterization of AlGaN/GaN high electron mobility transistor (HEMT) structures grown by plasma-assisted molecular beam epitaxy (PAMBE) are reported. High resolution X-ray diffraction (HRXRD) and X-ray reflectivity (XRR) were applied to show that structural properties of the AlGaN/GaN layers strongly depend on the substrate used for growth. It has been found that an additional 10 μm thick HVPE GaN layer grown on a commercial GaN/sapphire substrate significantly improves structural quality of AlGaN layer. However, the best structural parameters have been obtained for the HEMT sample grown on free-standing HVPE bulk GaN substrate.

Keywords

EN

61.05.cp; 61.05.cm; 81.15.Hi; 68.55.-a

Discipline

• 61.05.cm: X-ray reflectometry (surfaces, interfaces, films)
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 61.05.cp: X-ray diffraction
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 4
• Pages: 899-902

Dates

published

2012-04

Contributors

author

A. Wierzbicka

• Institute of Physics Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

Z. Żytkiewicz

• Institute of Physics Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Sobańska

• Institute of Physics Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Kłosek

• Institute of Physics Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Łusakowska

• Institute of Physics Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.121.899