Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure

• Authors: A. Pietnoczka , R. Bacewicz , T. Slupinski , J. Antonowicz , Su-Huai Wei
• Languages of publication: EN

Abstracts

EN

The annealing of heavily doped GaAs:Te can significantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for different states of the GaAs:Te crystals caused by the annealing corresponding to different electron concentrations. The best EXAFS fit for the samples with high electron concentration was obtained for the substitutional Te_{As} model with elongated Te-Ga bonds (as compared to the As-Ga distance). For the samples in the low concentration state the best fit was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium

Keywords

EN

61.05.cj; 61.72.uj

Discipline

• 61.72.uj: III-V and II-VI semiconductors
• 61.05.cj: X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.(for x-ray and EXAFS applications in biological physics, see 87.64.kd)

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 4
• Pages: 879-882

Dates

published

2012-04

Contributors

author

A. Pietnoczka

• Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland

author

R. Bacewicz

• Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland

author

T. Slupinski

• Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland

author

J. Antonowicz

• Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland

author

Su-Huai Wei

• National Renewable Energy Laboratory (NREL), 1617 Cole Blvd, Golden, CO 80401, United States

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Identifiers

DOI

10.12693/APhysPolA.121.879