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2012 | 121 | 4 | 879-882
Article title

Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure

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EN
Abstracts
EN
The annealing of heavily doped GaAs:Te can significantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for different states of the GaAs:Te crystals caused by the annealing corresponding to different electron concentrations. The best EXAFS fit for the samples with high electron concentration was obtained for the substitutional Te_{As} model with elongated Te-Ga bonds (as compared to the As-Ga distance). For the samples in the low concentration state the best fit was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium
Keywords
EN
Contributors
author
  • Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland
author
  • Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland
author
  • Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland
author
  • Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland
author
  • National Renewable Energy Laboratory (NREL), 1617 Cole Blvd, Golden, CO 80401, United States
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv121n4p204kz
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