Undulator-Like Radiation and Cooperative Phenomenon in Semiconductor Microstructure with Grating

• Authors: I. Tralle , P. Zięba
• Languages of publication: EN

Abstracts

EN

In the article the cooperative N^2-effect is considered, that is the radiation whose power is ım N^2, where N is the number of emitters which in this case is equal to the number of electrons in a bunch. The suggested effect is the result of combining two other effects, Gunn-effect in GaAs and undulator-like radiation which can be produced by means of microstructure with grating (microundulator). It is very probable that the effect can be used for the developing of a new semiconductor-based room temperature source of the THz radiation.

Keywords

EN

41.60.-m; 42.50.Gy; 73.61.Ey; 73.40.kp; 73.50.Fq

Discipline

• 42.50.Gy: Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
• 73.61.Ey: III-V semiconductors
• 41.60.-m: Radiation by moving charges
• 73.50.Fq: High-field and nonlinear effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 2
• Pages: 522-526

Dates

published

2012-02

Contributors

author

I. Tralle

• Institute of Physics, Mathematics and Natural Sciences Department, University of Rzeszów, al. T. Rejtana 16A,35-310 Rzeszów, Poland

author

P. Zięba

• Institute of Physics, Mathematics and Natural Sciences Department, University of Rzeszów, al. T. Rejtana 16A,35-310 Rzeszów, Poland

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Identifiers

DOI

10.12693/APhysPolA.121.522