Advanced Characterization of Material Properties on the Nanometer Scale Using Atomic Force Microscopy

• Authors: M. Fenner , S. Wu , J. Yu , H. Huber , F. Kienberger
• Languages of publication: EN

Abstracts

EN

We report recent advances in material characterization on the nanometer scale using scanning microwave microscopy. This combines atomic force microscopy and a vector network analyzer using microwave tip sample interaction to characterize dielectric and electronic material properties on the nanometer scale. We present the methods for calibration as well as applications. Scanning microwave microscopy features calibrated measurements of: (1) capacitance with attofarad sensitivity. For calibration a well characterized array of capacitors (0.1 fF to 10 fF) is used. The method is applied to determine the dielectric properties of thin organic films, (2) Semiconductor dopant density. Calibration is performed by imaging the cross-section of a standard sample with differently doped layers (dopant stair case) from 10^{16} atoms/cm^3 to 10^{20} atoms/cm^3.

Keywords

EN

77.55.-g; 07.79.-v; 68.37.Ps; 68.37.Uv; 07.57.Pt

Discipline

• 68.37.Ps: Atomic force microscopy (AFM)
• 07.57.Pt: Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
• 68.37.Uv: Near-field scanning microscopy and spectroscopy
• 07.79.-v: Scanning probe microscopes and components(see also 68.37.-d Microscopy of surfaces, interfaces, and thin films)
• 77.55.-g: Dielectric thin films(see also 85.50.-n Dielectric, ferroelectric, and piezoelectric devices; for microelectronics applications, see 85.40.-e; for methods of film deposition, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 2
• Pages: 416-419

Dates

published

2012-02

Contributors

author

M. Fenner

• Agilent Technologies GmbH, Kronberg, Germany

author

S. Wu

• Agilent Technologies Inc., Chandler, USA

author

J. Yu

• Agilent Technologies Inc., Chandler, USA

author

H. Huber

• Christian-Doppler-Laboratory, Johannes Kepler University, Linz, Austria

author

F. Kienberger

• Agilent Technologies GmbH, Kronberg, Germany

References

• [1] G. Binnig, C.F. Quate, C. Gerber, Phys. Rev. Lett. 56, 930 (1986)
• [2] S. Magonov, J. Alexander, S. Wu, in: Scanning Probe Microscopy of Functional Materials: Nanoscale Imaging and Spectroscopy, Eds. S.V. Kalinin, A. Gruverman, Springer, Berlin 2010, p. 233
• [3] R. Bennewitz, H.J. Hug, E. Meyer, Scanning Probe Microscopy: The Lab on a Tip, Springer, Berlin 2003
• [4] V.V. Talanov, A. Scherz, R.L. Moreland, A.R. Schwartz, Appl. Phys. Lett. 88, 134106 (2006)
• [5] J. Kim, K. Lee, B. Friedman, D. Cha, Appl. Phys. Lett. 83, 1032 (2003)
• [6] M. Tabib-Azar, D.-P. Su, A. Pohar, Rev. Sci. Instrum. 70, 3083 (1999)
• [7] A. Imtiaz, S.M. Anlage, J.D. Barry, J. Melngailis, Appl. Phys. Lett. 90, 143106 (2007)
• [8] A. Karbassi, D. Ruf, A.D. Bettermann, C.A. Paulson, D.W. van der Weide, H. Tanbakuchi, R. Stancliff, Rev. Sci. Instrum. 79, 094706 (2008)
• [9] W. Brezna, M. Schramboeck, A. Lugstein, S. Harasek, H. Enichlmair, E. Bertagnolli, E. Gornik, J. Smoliner, Appl. Phys. Lett. 83, 4253 (2003)
• [10] A. Imtiaz, S.M. Anlage, Ultramicroscopy 94, 209 (2003)
• [11] C. Eckhardt, W. Brezna, O. Bethge, E. Bertagnolli, J. Smoliner, J. Appl. Phys. 105, 113709 (2009)
• [12] Scanning Probe Microscopy, Eds. S. Kalinin, A. Gruverman, Springer, New York 2007
• [13] B.T. Rosner, D.W. van der Weide, Rev. Sci. Instrum. 73, 2505 (2002)
• [14] J. Smoliner, W. Brezna, Rev. Sci. Instrum. 78, 106104 (2007)
• [15] G. Gomilla, J. Toset, L. Fumagalli, J. Appl. Phys. 104, 024315 (2008)
• [16] Š. Lányi, Ultramicroscopy 103, 221 (2005)
• [17] K. Lai, W. Kundhikanjana, H. Peng, Y. Cui, M.A. Kelly, Z.X. Shen, Rev. Sci. Instrum. 80, 043707 (2009)
• [18] H.P. Huber, M. Moertelmaier, T.M. Wallis, C.J. Chiang, M. Hochleitner, A. Imtiaz, Y.J. Oh, K. Schilcher, M. Dieudonne, J. Smoliner, P. Hinterdorfer, S.J. Rosner, H. Tanbakuchi, P. Kabos, F. Kienberger, Rev. Sci. Instrum. 81, 113701 (2010)
• [19] S. Xu, G.Y. Liu, Langmuir 13, 127 (1997)
• [20] G.E. Poirier, E.D. Pylant, Science 272, 1145 (1996)
• [21] M.D. Porter, T.B. Bright, D.L. Allara, C.E.D. Chidsey, J. Am. Chem. Soc. 109, 3559 (1987)
• [22] S. Wu, J.-J. Yu, Appl. Phys. Lett. 97, 202902 (2010)
• [23] Physics of Semiconductor Devices, Ed. S.M. Sze, Wiley, New York 1981
• [24] T. Clarysse, M. Caymax, P. De Wolf, T. Trenkler, W. Vandervorst, J.S. McMurray, J. Kim, C.C. Williams, J.G. Clark, G. Neubauer, J. Vac. Sci. Technol. B 16, 394 (1998)
• [25] H.-P. Huber, I. Humer, M. Fenner, M. Moertelmaier, C. Rankl, A. Imtiaz, T.M. Wallis, H. Tanbakuchi, P. Hinterdorfer, P. Kabos, J. Smoliner, J. Kopansky, F. Kienberger, manuscript in preparation
• [26] W. Han, Agilent Application Note 5989-8881EN Rev A, Chandler 2008

Identifiers

DOI

10.12693/APhysPolA.121.416