Pulsed Laser Interference Patterning of Metallic Thin Films

• Authors: S. Riedel , P. Leiderer , E. Scheer , J. Boneberg
• Languages of publication: EN

Abstracts

EN

Pulsed laser interference is applied to metallic and semiconductor thin films in the thickness range of 40-100 nm. At intensities which induce local melting we observe local retraction of the molten material towards the unmolten areas due to dewetting. Thus micropatterning of surface gets feasible. Although this dewetting induced retraction should be a common behaviour of metals on oxide surfaces, two groups of materials can be distinguished. In the first group the former molten areas get completely blank of metal while in the second group a material droplet remains in the center of the molten area. We show that this behaviour can be attributed to a distinctly different way of liquid movement upon local melting.

Keywords

EN

68.55.-a; 68.08.Bc; 81.16.-c

Discipline

• 81.16.-c: Methods of micro- and nanofabrication and processing(for femtosecond probing of semiconductor nanostructures, see 82.53.Mj in physical chemistry and chemical physics)
• 68.08.Bc: Wetting
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 2
• Pages: 385-387

Dates

published

2012-02

Contributors

author

S. Riedel

• University of Konstanz, 78467 Konstanz, Germany

author

P. Leiderer

• University of Konstanz, 78467 Konstanz, Germany

author

E. Scheer

• University of Konstanz, 78467 Konstanz, Germany

author

J. Boneberg

• University of Konstanz, 78467 Konstanz, Germany

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Identifiers

DOI

10.12693/APhysPolA.121.385