Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

• Authors: M. Kim , K. Yim , S. Kim , G. Nam , D. Lee , Jin Kim , Jong Kim , J. Leem
• Languages of publication: EN

Abstracts

EN

Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (E_{U}) was changed inversely with optical band gap of the indium-doped ZnO thin films.

Keywords

EN

81.05.Dz; 81.20.Fw; 78.66.Hf

Discipline

• 78.66.Hf: II-VI semiconductors
• 81.05.Dz: II-VI semiconductors
• 81.20.Fw: Sol-gel processing, precipitation(for reactions in sol-gels, see 82.33.Ln; for sol-gels as disperse system, see 82.70.Gg)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 217-220

Dates

published

2012-01

Contributors

author

M. Kim

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea

author

K. Yim

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea

author

S. Kim

• School of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea

author

G. Nam

• School of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea

author

D. Lee

• Epi R&D team, Samsung LED Co. Ltd., Suwon, Gyeonggi-do 443-373, Republic of Korea

author

Jin Kim

• Research Center of Advanced Materials Development (RCAMD), Division of Advanced Materials Engineering, Chonbuk National University, Jeonju, Chonbuk 561-756, Republic of Korea

author

Jong Kim

• Department of Physics, Yeungnam University, Gyeongsan, Gyeongsangbuk-do 712-749, Republic of Korea

author

J. Leem

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea
• School of Nano Engineering, Inje University, Gimhae, Gyungnam 621-749, Republic of Korea

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Identifiers

DOI

10.12693/APhysPolA.121.217