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2012 | 121 | 1 | 217-220
Article title

Growth and Characterization of Indium-Doped Zinc Oxide Thin Films Prepared by Sol-Gel Method

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Indium-doped ZnO thin films were deposited by sol-gel spin-coating method with various In content. The effects of In content on the structural and optical properties of the indium-doped ZnO thin films were investigated by scanning electron microscopy, X-ray diffraction, and UV-visible spectroscopy. The particle-like surface morphology and the crystallinity of the indium-doped ZnO thin films were affected by change in the In content, especially at the In content of 3 at.%. The values of direct band gap were decreased with increase in the In content. The width of localized states in the optical band gap of the indium-doped ZnO thin films were changed with In content and the Urbach energy (E_{U}) was changed inversely with optical band gap of the indium-doped ZnO thin films.
Physical description
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