ZnO Nanorods on Nanofibrous ZnO Seed Layers by Hydrothermal Method and Their Annealing Effects

• Authors: K. Yim , S. Jeon , M. Kim , S. Kim , G. Nam , D. Lee , Jin Kim , Jong Kim , J. Leem
• Languages of publication: EN

Abstracts

EN

ZnO nanorods were grown by using the hydrothermal method on p-type Si (100) substrates with nanofibrous ZnO seed layers. Before the ZnO nanorods growth, nanofibrous ZnO seed layers were spin-coated onto the Si substrates. The structural and optical properties of ZnO nanorods were characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. The fibrous ZnO nanorods is possible due to the surface morphology of the nanofibrous ZnO seed layers. To investigate annealing effects of the ZnO nanorods, the post-annealing process was carried out at various temperatures ranging from 300 to 700C under argon conditions. The structural and optical properties of the ZnO nanorods were also affected by the post-annealing treatment.

Keywords

EN

81.05.Dz; 81.15.Lm; 78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors
• 81.05.Dz: II-VI semiconductors
• 81.15.Lm: Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 214-216

Dates

published

2012-01

Contributors

author

K. Yim

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

author

S. Jeon

• SMS PE Team 5, MagnaChip Semiconductor Ltd., Gumi 730-723, Republic of Korea

author

M. Kim

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea

author

S. Kim

• School of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea

author

G. Nam

• School of Nano Engineering, Inje University, Gimhae 621-749, Republic of Korea

author

D. Lee

• Epi-manufacturing Technology, Samsung LED Co. Ltd., Suwon 443-373, Republic of Korea

author

Jin Kim

• Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756, Republic of Korea

author

Jong Kim

• Department of Physics, Yeungnam University, Gyeongsan, Gyeongsangbuk-do 712-749, Republic of Korea

author

J. Leem

• Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae 621-749, Republic of Korea
• SMS PE Team 5, MagnaChip Semiconductor Ltd., Gumi 730-723, Republic of Korea

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Identifiers

DOI

10.12693/APhysPolA.121.214