Compact Modeling for Submicron Fully Depleted SOI MOSFET's

• Authors: R. Remmouche , N. Boutaoui , H. Bouridah
• Languages of publication: EN

Abstracts

EN

In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.

Keywords

EN

73.40.Qv; 85.30.Tv; 85.40.Bh

Discipline

• 85.40.Bh: Computer-aided design of microcircuits; layout and modeling
• 85.30.Tv: Field effect devices
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 190-192

Dates

published

2012-01

Contributors

author

R. Remmouche

• Electronics Department, Jijel University, 18000 Jijel, Algeria
• LEM Laboratory, Jijel University, 18000 Jijel, Algeria

author

N. Boutaoui

• LEM Laboratory, Jijel University, 18000 Jijel, Algeria

author

H. Bouridah

• Electronics Department, Jijel University, 18000 Jijel, Algeria
• LEM Laboratory, Jijel University, 18000 Jijel, Algeria

References

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Identifiers

DOI

10.12693/APhysPolA.121.190