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Abstracts
In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.
Discipline
Journal
Year
Volume
Issue
Pages
190-192
Physical description
Dates
published
2012-01
Contributors
author
- Electronics Department, Jijel University, 18000 Jijel, Algeria
- LEM Laboratory, Jijel University, 18000 Jijel, Algeria
author
- LEM Laboratory, Jijel University, 18000 Jijel, Algeria
author
- Electronics Department, Jijel University, 18000 Jijel, Algeria
- LEM Laboratory, Jijel University, 18000 Jijel, Algeria
References
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- 3. F. Djahli, S. Rahmani, R. Remmouche, Microelectron. Eng. 43-44, 587 (1998)
- 4. J.P. Colinge, Silicon on Insulator Technology: Materials to VLSI, Kluwer Academic Publishers, Boston 1997, p. 71
- 5. J.B. Roldan, F. Gamiz, J.A. Lopez-Villanueva, P. Cartujo-Cassinello, IEEE Electron Dev. Lett. 21, 239 (2000)
- 6. B. Iniguez, L.F. Ferreira, B. Gentinne, D. Flandre, IEEE Trans. Electron Dev. 43, 568 (1996)
- 7. B. Iniguez, D. Jiménez, L. Roig, H.A. Hamid, J. Pallarès, IEEE Trans. Electron Dev. 52, 1868 (2005)
- 8. M.J. Kumar, A. Chaudhry, H. Kumomi, IEEE Trans. Electron Dev. 51, 569 (2004)
- 9. G.V. Reddy, M.J. Kumar, IEEE Trans. Nanotechnol. 4, 260 (2005)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv121n158kz