Compact Modeling for Submicron Fully Depleted SOI MOSFET's

• Authors: R. Remmouche , N. Boutaoui , H. Bouridah
• Languages of publication: EN

Abstracts

EN

In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.

Keywords

EN

73.40.Qv; 85.30.Tv; 85.40.Bh

Discipline

• 85.40.Bh: Computer-aided design of microcircuits; layout and modeling
• 85.30.Tv: Field effect devices
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 190-192

Dates

published

2012-01

Contributors

author

R. Remmouche

• Electronics Department, Jijel University, 18000 Jijel, Algeria
• LEM Laboratory, Jijel University, 18000 Jijel, Algeria

author

N. Boutaoui

• LEM Laboratory, Jijel University, 18000 Jijel, Algeria

author

H. Bouridah

• Electronics Department, Jijel University, 18000 Jijel, Algeria
• LEM Laboratory, Jijel University, 18000 Jijel, Algeria

References

• 1. J.P. Colinge, Solid-State Electron. 48, 897 (2004)
• 2. B. Iniguez, J.P. Raskin, L. Demeus, A. Nève, D. Vanhoenacker, P. Simon, M. Gouffioul, D. Flandre, IEEE Trans. Electron Dev. 48, 1981 (2001)
• 3. F. Djahli, S. Rahmani, R. Remmouche, Microelectron. Eng. 43-44, 587 (1998)
• 4. J.P. Colinge, Silicon on Insulator Technology: Materials to VLSI, Kluwer Academic Publishers, Boston 1997, p. 71
• 5. J.B. Roldan, F. Gamiz, J.A. Lopez-Villanueva, P. Cartujo-Cassinello, IEEE Electron Dev. Lett. 21, 239 (2000)
• 6. B. Iniguez, L.F. Ferreira, B. Gentinne, D. Flandre, IEEE Trans. Electron Dev. 43, 568 (1996)
• 7. B. Iniguez, D. Jiménez, L. Roig, H.A. Hamid, J. Pallarès, IEEE Trans. Electron Dev. 52, 1868 (2005)
• 8. M.J. Kumar, A. Chaudhry, H. Kumomi, IEEE Trans. Electron Dev. 51, 569 (2004)
• 9. G.V. Reddy, M.J. Kumar, IEEE Trans. Nanotechnol. 4, 260 (2005)

Identifiers

DOI

10.12693/APhysPolA.121.190