Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition

• Authors: H. Bouridah , H. Haoues , M. Beghoul , F. Mansour , R. Remmouche , P. Temple-Boyer
• Languages of publication: EN

Abstracts

EN

In this work, we investigate the formation of silicon nanocrystals in annealed low pressure chemical vapor deposition in situ nitrogen doped silicon thin films (SiN_x) obtained at low temperature (465°C) by using a mixture of disilane (Si_2H_6) and ammonia (NH_3). Results show that nitrogen content in films plays an important role in defining the obtained films morphology in terms of crystallites sizes and their distribution. Indeed, according to the nitrogen content introduced in films, the crystalline state of films varies from a submicron crystalline structure to a nanocrystalline structure. An average silicon nanocrystalline size of 10 nm was obtained for film with x = 0.07 nitrogen content, annealed under a temperature of 850C during 2 h.

Keywords

EN

68.55.ag; 68.55.J-; 61.46.Hk; 81.07.Bc

Discipline

• 81.07.Bc: Nanocrystalline materials
• 68.55.ag: Semiconductors
• 68.55.J-: Morphology of films
• 61.46.Hk: Nanocrystals

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 175-177

Dates

published

2012-01

Contributors

author

H. Bouridah

• Département d'Electronique, Université de Jijel, B.P. 98, Ouled Aissa, Jijel 18000, Algeria

author

H. Haoues

• Département d'Electronique, Université de Jijel, B.P. 98, Ouled Aissa, Jijel 18000, Algeria

author

M. Beghoul

• Département d'Electronique, Université de Jijel, B.P. 98, Ouled Aissa, Jijel 18000, Algeria

author

F. Mansour

• Département d'Electronique, Université Mentouri, Route d'Ain El-Bey, Constantine 25000, Algeria

author

R. Remmouche

• Département d'Electronique, Université de Jijel, B.P. 98, Ouled Aissa, Jijel 18000, Algeria

author

P. Temple-Boyer

• CNRS, LAAS, 7 av. du colonel Roche, F-31077 Toulouse, France
• UPS, INSA, INP, ISAE, LAAS, Université de Toulouse, F-31077 Toulouse, France

References

• 1. I.Y.Y. Bu, A.J. Flewitt, W.I. Milne, Curr. Appl. Phys. 11, 171 (2011)
• 2. N. Dandosso, G. Das, S. Larcheri, G. Mariotto, G. Dalba, L. Pavesi, A. Irrera, F. Priolo, F. Lacona, F. Rocca, J. Appl. Phys. 101, 113510 (2007)
• 3. A.M. Funde, N.A. Bakr, D.K. Kamble, R.R. Hawaldar, D.P. Amalnerkar, S.R. Jadkar, Solar Energy Mater. Solar Cells 92, 1217 (2008)
• 4. S. Kohli, J.A. Theil, P.C. Dippo, K.M. Jones, M.M. Al-Jassim, R.K. Ahrenkiel, C.D. Rithner, P.K. Dorhout, Nanotechnology 15, 1831 (2004)
• 5. P. Temple-Boyer, B. Rousset, E. Scheid, Thin Solid Films 518, 6897 (2010)

Identifiers

DOI

10.12693/APhysPolA.121.175