ZnO Thin Films Synthesized by Sol-Gel Process for Photonic Applications

• Authors: L. Znaidi , T. Touam , D. Vrel , N. Souded , S. Ben Yahia , O. Brinza , A. Fischer , A. Boudrioua
• Languages of publication: EN

Abstracts

EN

Undoped and aluminum-doped ZnO thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol and monoethanolamine are used as precursor, solvent and stabilizer, respectively. In the case of Al-doped ZnO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 or 2 at.% Al. The multi thin layers are prepared by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550°C. Films with preferential orientation along the c-axis are successfully obtained. The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated for different elaboration parameters (e.g. layer number) using X-ray diffraction, atomic force microscopy, scanning electronic microscopy. Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that our films are monomodes at 632.8 nm with propagation optical loss estimated around 1.6 dB/cm.

Keywords

EN

81.20.Fw; 61.46.-w; 78.20.-e

Discipline

• 81.20.Fw: Sol-gel processing, precipitation(for reactions in sol-gels, see 82.33.Ln; for sol-gels as disperse system, see 82.70.Gg)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 61.46.-w: Structure of nanoscale materials(for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g; for electronic transport in nanoscale materials, see 73.63.-b; see also 62.23.-c Structural classes of nanoscale systems; 64.70.Nd Structural transitions in nanoscale materials; for magnetic properties of nanostructures, see 75.75.-c)

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 165-168

Dates

published

2012-01

Contributors

author

L. Znaidi

• Laboratoire des Sciences des Procédés et des Matériaux, CNRS/UPR 3407, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France

author

T. Touam

• Laboratoire de Physique des Lasers, CNRS/UMR 7538, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France

author

D. Vrel

• Laboratoire des Sciences des Procédés et des Matériaux, CNRS/UPR 3407, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France

author

N. Souded

• Laboratoire des Sciences des Procédés et des Matériaux, CNRS/UPR 3407, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France

author

S. Ben Yahia

• Laboratoire des Sciences des Procédés et des Matériaux, CNRS/UPR 3407, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France

author

O. Brinza

• Laboratoire des Sciences des Procédés et des Matériaux, CNRS/UPR 3407, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France

author

A. Fischer

• Laboratoire de Physique des Lasers, CNRS/UMR 7538, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France

author

A. Boudrioua

• Laboratoire de Physique des Lasers, CNRS/UMR 7538, Université Paris 13, 99 Av. J.-B. Clément, 93430 Villetaneuse, France

References

• 1. T.L. Yang, D.H. Zhang, J. Ma, H.L. Ma, Y. Chen, Thin Solid Films 326, 60 (1998)
• 2. M. Tomar, V. Gupta, K. Sreenivas, A. Mansingh, Dev. Mater. Reliabil. 5, 494 (2005)
• 3. T. Mitsuyu, O. Yamazaki, K. Ohji, K. Wasa, Ferroelectrics 42, 233 (1982)
• 4. F.R. Blom, D.J. Yntema, F.C.M. Van de Pol, M. Elwenspoek, J.H.J. Fluitman, Th.J.A. Popma, Sensors Actuators A21-A23, 226 (1990)
• 5. C.J. Van Mullem, F.R. Blom, J.H.J. Fluitman, M. Elwenspoek, Sensors Actuators A25-27, 379 (1991)
• 6. Z. Li, W. Gao, Mater. Lett. 58, 1363 (2004)
• 7. J.H. Lee, B.W. Yeo, B.O. Park, Thin Solid Films 457, 333 (2004)
• 8. H. Kashani, J. Electron. Mater. 27, 876 (1998)
• 9. P. Souletie, S. Bethke, B.W. Wessels, H. Pan, J. Cryst. Growth 86, 248 (1988)
• 10. G.I. Petrov, V. Shcheslavskiy, V.V. Yakovlev, I. Ozerov, E. Chelnokov, W. Marine, Appl. Phys. Lett. 83, 3993 (2003)
• 11. X.T. Zhang, Y.C. Liu, J.Y. Zhang, Y.M. Lu, D.Z. Shen, X.W. Fan, X.G. Kong, J. Cryst. Growth 254, 80 (2003)
• 12. B. Sang, Y. Nagoya, K. Kushiya, O. Yamase, Sol. Energy Mater. Sol. Cells 75, 179 (2003)
• 13. B.S. Li, Y.C. Liu, Z.Z. Zhi, D.Z. Shen, Y.M. Lu, J.Y. Zhang, X.G. Kong, X.W. Fan, Thin Solid Films 414, 170 (2002)
• 14. Y. Chen, D.M. Bagnall, H. Koh, K. Park, K. Hiraga, Z. Zhu, T. Yao, J. Appl. Phys. 84, 3912 (1998)
• 15. M. Ortega-López, A. Avila-García, M.L. Albor-Aguilera, V.M. Sánchez Resendiz, Mater. Res. Bull. 38, 1241 (2003)
• 16. L. Znaidi, Mater. Sci. Eng. B 174, 18 (2010)
• 17. P.K. Tien, R. Ulrich, J. Opt. Soc. Am. 60, 1325 (1970)
• 18. C.S. Barret, T.B. Massalski, Structure of Metals, Pergamon Press, Oxford 1980, p. 205
• 19. R.Th. Kersten, Opt. Commun. 9, 427 (1973)

Identifiers

DOI

10.12693/APhysPolA.121.165