PL EN


Preferences help
enabled [disable] Abstract
Number of results
2012 | 121 | 1 | 158-161
Article title

Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor

Content
Title variants
Languages of publication
EN
Abstracts
EN
Owing to the optimized growth technology of the 1-2 nm calcium fluoride films on n-(111)-silicon, metal/tunnel-insulator/semiconductor phototransistors have been fabricated by the molecular beam epitaxy at the temperature 250°C. The characteristics of these transistors were measured in a wide range of voltages, and the proofs for current gain were found throughout the investigated range. The gain value exceeds 10^3 approaching the theoretically estimated value in this system. The stability and reproducibility of the device characteristics were satisfactory. The results support the candidacy of calcium fluoride for being a vital dielectric in silicon-based functional electronics.
Keywords
EN
Contributors
author
  • Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
  • Grenoble Institute of Technology, 46 av. Felix Viallet, 38031 Grenoble, France
author
  • Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
author
  • Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
References
  • 1. W. Hayes, Crystals with the Fluorite Structure: Electronic, Vibrational, and Defect Properties, Clarendon, Oxford 1974
  • 2. M. Sugiyama, M. Oshima, Microelectron. J. 27, 361 (1996)
  • 3. M. Watanabe, Y. Iketani, M. Asada, Jpn. J. Appl. Phys. 39, L964 (2000)
  • 4. S. Watanabe, M. Maeda, T. Sugisaki, K. Tsutsui, Jpn. J. Appl. Phys. 44, 2637 (2005)
  • 5. M.I. Vexler, Yu.Yu. Illarionov, S.M. Suturin, V.V. Fedorov, N.S. Sokolov, Semicond. Sci. Technol. 25, 095007 (2010)
  • 6. J.G. Simmons, G.W. Taylor, Solid-State Electron. 29, 287 (1986)
  • 7. B. Zhang, K. Furuya, Y. Ikeda, N. Kikegawa, Jpn. J. Appl. Phys. 38, 4887 (1999)
  • 8. M.I. Vexler, N.S. Sokolov, S.M. Suturin, A.G. Banshchikov, S.E. Tyaginov, T. Grasser, J. Appl. Phys. 105, 083716 (2009)
  • 9. A. Ishizaka, Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv121n148kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.