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Abstracts
Owing to the optimized growth technology of the 1-2 nm calcium fluoride films on n-(111)-silicon, metal/tunnel-insulator/semiconductor phototransistors have been fabricated by the molecular beam epitaxy at the temperature 250°C. The characteristics of these transistors were measured in a wide range of voltages, and the proofs for current gain were found throughout the investigated range. The gain value exceeds 10^3 approaching the theoretically estimated value in this system. The stability and reproducibility of the device characteristics were satisfactory. The results support the candidacy of calcium fluoride for being a vital dielectric in silicon-based functional electronics.
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Pages
158-161
Physical description
Dates
published
2012-01
Contributors
author
- Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
- Grenoble Institute of Technology, 46 av. Felix Viallet, 38031 Grenoble, France
author
- Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
author
- Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
author
- Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
author
- Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv121n148kz