Calcium Fluoride Barrier Layer in Tunnel Emitter Phototransistor

• Authors: Y. Illarionov , M. Vexler , S. Suturin , V. Fedorov , N. Sokolov
• Languages of publication: EN

Abstracts

EN

Owing to the optimized growth technology of the 1-2 nm calcium fluoride films on n-(111)-silicon, metal/tunnel-insulator/semiconductor phototransistors have been fabricated by the molecular beam epitaxy at the temperature 250°C. The characteristics of these transistors were measured in a wide range of voltages, and the proofs for current gain were found throughout the investigated range. The gain value exceeds 10^3 approaching the theoretically estimated value in this system. The stability and reproducibility of the device characteristics were satisfactory. The results support the candidacy of calcium fluoride for being a vital dielectric in silicon-based functional electronics.

Keywords

EN

73.40.Qv; 73.40.Gk; 73.61.Ng

Discipline

• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 73.61.Ng: Insulators

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 158-161

Dates

published

2012-01

Contributors

author

Y. Illarionov

• Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia
• Grenoble Institute of Technology, 46 av. Felix Viallet, 38031 Grenoble, France

author

M. Vexler

• Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia

author

S. Suturin

• Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia

author

V. Fedorov

• Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia

author

N. Sokolov

• Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 St.-Petersburg, Russia

References

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Identifiers

DOI

10.12693/APhysPolA.121.158