Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching

• Authors: K. Al-Heuseen , M. Hashim
• Languages of publication: EN

Abstracts

EN

In this paper porous and as-grown GaN metal-semiconductor-metal photodiodes with Ni contact electrodes were fabricated. Structural and optical properties were studied of the both samples. Both detectors show a sharp cut-off wavelength at 370 nm, with a maximum responsivity of 0.14 A/W and 0.065 A/W achieved at 360 nm for porous GaN and as-grown metal-semiconductor-metal photodetectors, respectively. The metal-semiconductor-metal photodiode based on porous GaN shows enhanced twice magnitude of responsivity relative to the as-grown GaN metal-semiconductor-metal photodiode. Enhancement of responsivity can be attributed to the relaxation of stress and reduction of surface pit density in the porous sample. The porous sample showed a significantly low dark current at 5 V as compared to as grown sample.

Keywords

EN

78.67.Rb; 42.79.Pw

Discipline

• 42.79.Pw: Imaging detectors and sensors(see also 85.60.Gz Photodetectors)
• 78.67.Rb: Nanoporous materials

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 71-73

Dates

published

2012-01

Contributors

author

K. Al-Heuseen

• Al-Balqa, Applied University, Ajloun University College, Ajloun, Jordan

author

M. Hashim

• Al-Balqa, Applied University, Ajloun University College, Ajloun, Jordan

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Identifiers

DOI

10.12693/APhysPolA.121.71