Influence of Annealing Temperature on the Electrical and Optical Properties of CdS Thin Films

• Authors: S. Elmas , S. Ozcan , S. Ozder , V. Bilgin
• Languages of publication: EN

Abstracts

EN

CdS thin films were grown onto glass substrates at the substrate temperature of 573 ± 5 K by ultrasonic spray pyrolysis technique. The electrical and optical properties of the films were characterized before and after thermal annealing by using electrical resistivity measurements and UV/VIS spectrophotometer, respectively. Thermal annealing of CdS films was carried out in air ambient at various annealing temperatures from 473 to 673 K. The variation in electrical conductivity and optical parameters such as transmittance, absorbance and energy band gap of the films with thermal annealing temperature was investigated.

Keywords

EN

72.15.Eb; 78.20.Ci

Discipline

• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 72.15.Eb: Electrical and thermal conduction in crystalline metals and alloys

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 56-58

Dates

published

2012-01

Contributors

author

S. Elmas

• Physics Department, University of Canakkale Onsekiz Mart, Terzioglu Campus, 17020, Canakkale, Turkey

author

S. Ozcan

• Physics Department, University of Canakkale Onsekiz Mart, Terzioglu Campus, 17020, Canakkale, Turkey

author

S. Ozder

• Physics Department, University of Canakkale Onsekiz Mart, Terzioglu Campus, 17020, Canakkale, Turkey

author

V. Bilgin

• Physics Department, University of Canakkale Onsekiz Mart, Terzioglu Campus, 17020, Canakkale, Turkey

References

• 1. N. Romeo, V. Canevari, Sol. Energy Mater Sol. Cells 58, 209 (1999)
• 2. A. Kumar, S. Mital, J. Mol. Catal. A Chem. 219, 65 (2004)
• 3. S.A. Al Kuhaimi, Vacuum 51, 349 (1998)
• 4. S. Sarpa, D.D. Sarma, Phys. Rev. B 69, 125304 (2004)
• 5. R.R. Arya, P.M. Sarro, J.J. Loferski, Appl. Phys. Lett. 41, 355 (1982)
• 6. X. Duan, C. Niu, V. Sahi, J. Chen, J.W. Parce, S. Empedocles, J. Goldman, Nature 425, 274 (2003)
• 7. J. Tauc, R. Grigorovich, A. Vancu, Phys. Status Solidi 15, 627 (1966)
• 8. J.I. Pankove, Optical Process in Semiconductors, Solid State Physical Electronics Series, Prentice-Hall, NJ 1971, p. 422

Identifiers

DOI

10.12693/APhysPolA.121.56