Deposition and Characterization of CdS, CuS and ZnS Thin Films Deposited by SILAR Method

• Authors: B. Guzeldir , M. Saglam , A. Ates
• Languages of publication: EN

Abstracts

EN

Cadmium sulfide, copper sulfide and zinc sulfide films were grown on Si(111) substrate by successive ionic layer adsorption and reaction method at room temperature. The crystalline structure and morphology of obtained films were characterized by X-ray diffraction, scanning electronic microscope and energy dispersive X-ray analysis methods. The films were polycrystalline and showed preferred orientation. The surface morphology of these films looked relatively smooth and homogeneous in the scanning electron microscope image. The energy dispersive X-ray analysis spectra showed that the expected elements exist in the thin films.

Keywords

EN

61.05.-a; 61.05.cp; 61.72.uj

Discipline

• 61.72.uj: III-V and II-VI semiconductors
• 61.05.-a: Techniques for structure determination
• 61.05.cp: X-ray diffraction

• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 33-35

Dates

published

2012-01

Contributors

author

B. Guzeldir

• Department of Physics, Faculty of Sciences, University of Atatürk, Erzurum, Turkey

author

M. Saglam

• Department of Physics, Faculty of Sciences, University of Atatürk, Erzurum, Turkey

author

A. Ates

• Department of Material Eng., Faculty of Eng. and Nature Sciences, University of Yıldırım Beyazıt, Ankara, Turkey

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Identifiers

DOI

10.12693/APhysPolA.121.33