Electrical Properties of InP Crystals with Inhomogeneities Regions

• Authors: N. Kekelidze , D. Kekelidze , L. Milovanova , E. Khutsishvili , Z. Davitaya , B. Kvirkvelia , D. Khomasuridze
• Languages of publication: EN

Abstracts

EN

The parameters of potential well, which arises around inhomogeneities of technological origin in n-InP, have been analyzed using electrical measurements data. Model of spherical space-charge regions surrounding disordered regions was applied for explanation of results and found to be in fair agreement with experimental data. Comparison of experimental data with theoretical computations displays scattering of current carriers due to the disordered regions in n-InP additional to lattice and impurity ions scattering.

Keywords

EN

73.61.Ey; 72.80.Ey; 72.20.My; 72.80.Ng; 72.20.Dp

Discipline

• 72.20.Dp: General theory, scattering mechanisms
• 72.80.Ey: III-V and II-VI semiconductors
• 72.20.My: Galvanomagnetic and other magnetotransport effects
• 73.61.Ey: III-V semiconductors
• 72.80.Ng: Disordered solids

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2012
• Volume: 121
• Issue: 1
• Pages: 27-29

Dates

published

2012-01

Contributors

author

N. Kekelidze

• Iv. Javakhishvili Tbilisi State University, I. Chavchavadze Ave., 0179 Tbilisi, Georgia
• Georgian Technical University, 77 Kostava Str., 0171 Tbilisi, Georgia
• Ferdinand Tavadze Institute of Metallurgy and Materials Science, 15 Kazbegi Str., 0160 Tbilisi, Georgia

author

D. Kekelidze

• Iv. Javakhishvili Tbilisi State University, I. Chavchavadze Ave., 0179 Tbilisi, Georgia

author

L. Milovanova

• Iv. Javakhishvili Tbilisi State University, I. Chavchavadze Ave., 0179 Tbilisi, Georgia

author

E. Khutsishvili

• Ferdinand Tavadze Institute of Metallurgy and Materials Science, 15 Kazbegi Str., 0160 Tbilisi, Georgia

author

Z. Davitaya

• Iv. Javakhishvili Tbilisi State University, I. Chavchavadze Ave., 0179 Tbilisi, Georgia

author

B. Kvirkvelia

• Iv. Javakhishvili Tbilisi State University, I. Chavchavadze Ave., 0179 Tbilisi, Georgia

author

D. Khomasuridze

• Georgian Technical University, 77 Kostava Str., 0171 Tbilisi, Georgia

References

• 1. A.Y. Shik, Electronic Properties of Inhomogeneous Semiconductors, Electrocomponent Science Monographs, Vol. 9, Gordon and Breach, London 1995, p. 1
• 2. S. Baranovski, Charge Transport in Disordered Solids with Applications in Electronics & Optoelectronic Applications, Wiley, Korolev 2006
• 3. I. Kuznetsova, T. Meier, S.T. Cundiff, P. Thomas, Phys. Rev. B 76, 153301 (2007)
• 4. I. Kuznetsova, N. Gőgh, J. Förstner, T. Meier, S.T. Cundiff, I. Varga, P. Thomas, Phys. Rev. B 81, 075307 (2010)
• 5. R.L. Weisberg, J. Appl. Phys. 33, 1817 (1962)

Identifiers

DOI

10.12693/APhysPolA.121.27