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Abstracts
We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on Al_2O_3 and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × 10^6 A/cm^2 at 4.8 K.
Discipline
- 81.15.Jj: Ion and electron beam-assisted deposition; ion plating(see also 52.77.Dq Plasma-based ion implantation and deposition in physics of plasmas)
- 74.78.-w: Superconducting films and low-dimensional structures
- 74.62.Bf: Effects of material synthesis, crystal structure, and chemical composition(for methods of materials synthesis, see 81.20.-n)
- 81.15.Cd: Deposition by sputtering
Journal
Year
Volume
Issue
Pages
A-76-A-79
Physical description
Dates
published
2011-12
Contributors
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Departments of Electrical and Computer Engineering and Physics and Astronomy, Materials Science Program and Laboratory for Laser Energetics, University of Rochester, Rochester, NY-14627-0231, USA
References
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- [4] A. Korneev, P. Kouminov, V. Izbenko, G. Chulkova, K. Smirnov, B. Voronov, G.N. Gol'tsman, M. Currie, W. Lo, K. Wilsher, J. Zhang, W. Slysz, A. Pearlman, A. Verevkin, R. Sobolewski, Appl. Phys. Lett. 84, 5338 (2004)
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- [9] M.G. Tanner, C.M. Natarajan, V.K. Pottapenjara, J.A. O'Connor, R.J. Warburton, R.H. Hadfield, B. Baek, S. Nam, S.N. Dorenbos, E. Bermúdez Ureña, T. Zijlstra, T.M. Klapwijk, V. Zwiller, Appl. Phys. Lett. 96, 221109 (2010)
- [10] N. Marrocco, G.P. Pepe, A. Capretti, L. Parlato, V. Pagliarulo, G. Peluso, A. Barone, R. Cristiano, M. Ejrnaes, A. Casaburi, N. Kashiwazaki, T. Taino, H. Myoren, R. Sobolewski, Appl. Phys. Lett. 97, 092504 (2010)
- [11] J.R. Gao, M. Hajenius, F.D. Tichelaar, T.M. Klapwijk, B. Voronov, E. Grishin, G.N. Gol'tsman, C.A. Zorman, M. Mehregany, Appl. Phys. Lett. 91, 062504 (2007)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap22kz