Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors

• Authors: M. Guziewicz , W. Slysz , M. Borysiewicz , R. Kruszka , Z. Sidor , M. Juchniewicz , K. Golaszewska , J. Domagala , W. Rzodkiewicz , J. Ratajczak , J. Bar , M. Wegrzecki , R. Sobolewski
• Languages of publication: EN

Abstracts

EN

We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on Al_2O_3 and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × 10^6 A/cm^2 at 4.8 K.

Keywords

EN

74.62.Bf; 74.78.-w; 81.15.Cd; 81.15.Jj

Discipline

• 81.15.Jj: Ion and electron beam-assisted deposition; ion plating(see also 52.77.Dq Plasma-based ion implantation and deposition in physics of plasmas)
• 74.78.-w: Superconducting films and low-dimensional structures
• 74.62.Bf: Effects of material synthesis, crystal structure, and chemical composition(for methods of materials synthesis, see 81.20.-n)
• 81.15.Cd: Deposition by sputtering

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-76-A-79

Dates

published

2011-12

Contributors

author

M. Guziewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

W. Slysz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Borysiewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

R. Kruszka

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

Z. Sidor

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Juchniewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

K. Golaszewska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

J. Domagala

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Rzodkiewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

J. Ratajczak

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

J. Bar

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Wegrzecki

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

R. Sobolewski

• Departments of Electrical and Computer Engineering and Physics and Astronomy, Materials Science Program and Laboratory for Laser Energetics, University of Rochester, Rochester, NY-14627-0231, USA

References

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Identifiers

DOI

10.12693/APhysPolA.120.A-76