The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

• Authors: M. Matys , M. Miczek , B. Adamowicz , Z. Żytkiewicz , E. Kamińska , A. Piotrowska , T. Hashizume
• Languages of publication: EN

Abstracts

EN

The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from 10^{15} to 10^{19} photon cm^{-2} s^{-1}) for n-GaN samples with various surface passivating layers (Al_2O_3, SiO_2).

Keywords

EN

78.55.-m; 71.35.-y; 73.20.-r; 71.55.-i; 02.70.Dh

Discipline

• 73.20.-r: Electron states at surfaces and interfaces
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)
• 02.70.Dh: Finite-element and Galerkin methods
• 71.35.-y: Excitons and related phenomena
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-73-A-75

Dates

published

2011-12

Contributors

author

M. Matys

• Department of Surface Physics and Nanostructures, Institute of Physics - Centre for Science and Education, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

author

M. Miczek

• Department of Surface Physics and Nanostructures, Institute of Physics - Centre for Science and Education, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

author

B. Adamowicz

• Department of Surface Physics and Nanostructures, Institute of Physics - Centre for Science and Education, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland

author

Z. Żytkiewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

T. Hashizume

• Research Center for Integrated Quantum Electronics, Hokkaido University, Kita-13 Nishi-8, Sapporo 060-8628, Japan

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Identifiers

DOI

10.12693/APhysPolA.120.A-73