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2011 | 120 | 6A | A-73-A-75
Article title

The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

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EN
Abstracts
EN
The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from 10^{15} to 10^{19} photon cm^{-2} s^{-1}) for n-GaN samples with various surface passivating layers (Al_2O_3, SiO_2).
Keywords
Contributors
author
  • Department of Surface Physics and Nanostructures, Institute of Physics - Centre for Science and Education, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland
author
  • Department of Surface Physics and Nanostructures, Institute of Physics - Centre for Science and Education, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland
author
  • Department of Surface Physics and Nanostructures, Institute of Physics - Centre for Science and Education, Silesian University of Technology, Bolesława Krzywoustego 2, 44-100 Gliwice, Poland
  • Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
  • Research Center for Integrated Quantum Electronics, Hokkaido University, Kita-13 Nishi-8, Sapporo 060-8628, Japan
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap21kz
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