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2011 | 120 | 6A | A-73-A-75
Article title

The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN

Content
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Languages of publication
EN
Abstracts
EN
The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from 10^{15} to 10^{19} photon cm^{-2} s^{-1}) for n-GaN samples with various surface passivating layers (Al_2O_3, SiO_2).
Keywords
Year
Volume
120
Issue
6A
Pages
A-73-A-75
Physical description
Dates
published
2011-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap21kz
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