Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

• Authors: M. Guziewicz , W. Jung , J. Grochowski , M. Borysiewicz , K. Golaszewska , R. Kruszka , A. Baranska , A. Piotrowska , B. Witkowski , J. Domagala , M. Gryzinski , K. Tyminska , A. Stonert
• Languages of publication: EN

Abstracts

EN

Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using ^{137}Cs and ^{60}Co sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of 4.36 × 10^{16} cm^{-3} to 2.86 × 10^{16} cm^{-3} after ^{137}Cs γ irradiation with doses of 10 Gy. In the case of γ irradiation from ^{60}Co source, hole concentration of the film decreases from 6.3 × 10^{16}/cm^3 to 4.1 × 10^{16}/cm^3 and to 2.9 × 10^{16}/cm^3 after successive expositions with a dose of 20 Gy.

Keywords

EN

73.61.Jc; 29.40.-n; 87.53.Bn

Discipline

• 73.61.Jc: Amorphous semiconductors; glasses
• 87.53.Bn: Dosimetry/exposure assessment
• 29.40.-n: Radiation detectors(for mass spectrometers, see 07.75.+h; see also 95.55.Vj Neutrino, muon, pion, and other particle detectors; cosmic ray detectors in astronomy)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-69-A-72

Dates

published

2011-12

Contributors

author

M. Guziewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

W. Jung

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

J. Grochowski

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Borysiewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

K. Golaszewska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

R. Kruszka

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

A. Baranska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

B. Witkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Domagala

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Gryzinski

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

K. Tyminska

• Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland

author

A. Stonert

• The Andrzej Sołtan Institute for Nuclear Studies, Hoża 69, 00-681 Warsaw, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.120.A-69