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Number of results
2011 | 120 | 6A | A-69-A-72
Article title

Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

Content
Title variants
Languages of publication
EN
Abstracts
EN
Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using ^{137}Cs and ^{60}Co sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of 4.36 × 10^{16} cm^{-3} to 2.86 × 10^{16} cm^{-3} after ^{137}Cs γ irradiation with doses of 10 Gy. In the case of γ irradiation from ^{60}Co source, hole concentration of the film decreases from 6.3 × 10^{16}/cm^3 to 4.1 × 10^{16}/cm^3 and to 2.9 × 10^{16}/cm^3 after successive expositions with a dose of 20 Gy.
Keywords
EN
Year
Volume
120
Issue
6A
Pages
A-69-A-72
Physical description
Dates
published
2011-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap20kz
Identifiers
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