Positron-Annihilation, Structural and Optical Studies on Properties of Nanostructured ZrO_2, ZnO, Bi_2O_3 and ZnO-Bi_2O_3

• Authors: J. Fidelus , A. Karbowski , J. Grabis , A. Jusza , R. Piramidowicz , R. Brusa , G. Karwasz
• Languages of publication: EN

Abstracts

EN

Nanostructured oxides, like ZrO_2, on ZnO and Bi_2O_3 show interesting electronic and photovoltaic properties. Pressed and annealed samples were obtained from nanopowders grown in hydrothermal or plasma processes. Positron annihilation (the Doppler broadening depth-resolved, positron lifetime) techniques were used to trace structural changes in samples after annealing. Photoluminescence spectra of all investigated samples show broad-band emission in the visible, with intensity depending on annealing temperature. The change in nanoporosity and positron lifetimes correlate well with changes in photoluminescence properties. The nature of broad photoluminescence bands is to be understood; further positron studies via the Doppler coincidence method would help in identifying the nature of defects in these samples.

Keywords

EN

71.60.+z; 78.70.Bj; 71.55.Cn

Discipline

• 71.55.Cn: Elemental semiconductors
• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 71.60.+z: Positron states(for positron annihilation, see 78.70.Bj)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-66-A-68

Dates

published

2011-12

Contributors

author

J. Fidelus

• Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland

author

A. Karbowski

• Institute of Physics, Nicolaus Copernicus University, Toruń, Poland

author

J. Grabis

• Institute of Inorganic Chemistry, Riga Technical University, Salaspils, Latvia

author

A. Jusza

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland

author

R. Piramidowicz

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Warsaw, Poland

author

R. Brusa

• Dipartimento di Fisica, Universita di Trento, Trento, Italy

author

G. Karwasz

• Institute of Physics, Nicolaus Copernicus University, Toruń, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.120.A-66