The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition

• Authors: M. Alevli , C. Ozgit , I. Donmez
• Languages of publication: EN

Abstracts

EN

In this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia (NH_3) plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100C.

Keywords

EN

81.15.Gh; 78.66.Fd; 78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors
• 78.66.Fd: III-V semiconductors
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-58-A-60

Dates

published

2011-12

Contributors

author

M. Alevli

• Physics Department, Faculty of Arts and Sciences, Marmara University, Istanbul 34722, Turkey

author

C. Ozgit

• UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey

author

I. Donmez

• UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey

References

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Identifiers

DOI

10.12693/APhysPolA.120.A-58