Self-Limiting Growth of GaN at Low Temperatures

• Authors: C. Ozgit , I. Donmez , N. Biyikli
• Languages of publication: EN

Abstracts

EN

GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia (NH_3) as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 Å/cycle were obtained within the temperature ranges of 250-350 and 150-350C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.

Keywords

EN

81.05.Ea; 81.15.Gh; 82.80.Pv

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 82.80.Pv: Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-55-A-57

Dates

published

2011-12

Contributors

author

C. Ozgit

• UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey

author

I. Donmez

• UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey

author

N. Biyikli

• UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey

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Identifiers

DOI

10.12693/APhysPolA.120.A-55