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Number of results
2011 | 120 | 6A | A-55-A-57
Article title

Self-Limiting Growth of GaN at Low Temperatures

Content
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EN
Abstracts
EN
GaN thin films were deposited in a self-limiting fashion at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) or triethylgallium (TEG) as the group-III, and ammonia (NH_3) as the group-V precursors. TMG and TEG saturations were observed at 185 and 150°C, for doses starting from 0.015 and 1 s, respectively. Constant deposition rates of ≈ 0.51 and ≈ 0.48 Å/cycle were obtained within the temperature ranges of 250-350 and 150-350C for TMG- and TEG-based plasma-enhanced atomic layer deposition processes. Oxygen contents of the films were high ( ≈ 20 at.%) as determined by X-ray photoelectron spectroscopy.
Keywords
EN
Contributors
author
  • UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
author
  • UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
author
  • UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
References
  • [1] M. Leskela, M. Ritala, Thin Solid Films 409, 138 (2002)
  • [2] R.L. Puurunen, J. Appl. Phys. 97, 121301 (2005)
  • [3] S.C. Jain, M. Willander, J. Narayan, R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000)
  • [4] M.A. Khan, R.A. Skogman, J.M. Van Hove, D.T. Olson, J.N. Kuznia, Appl. Phys. Lett. 60, 1366 (1992)
  • [5] N.H. Karam, T. Parodos, P. Colter, D. McNulty, W. Rowland, J. Schetzina, N. El-Masry, S.M. Bedair, Appl. Phys. Lett. 67, 94 (1995)
  • [6] H. Tsuchiya, M. Akamatsu, M. Ishida, F. Hasegawa, Jpn. J. Appl. Phys. 35, L748 (1996)
  • [7] A. Koukitu, Y. Kumagai, T. Taki, H. Seki, Jpn. J. Appl. Phys. 38, 4980 (1999)
  • [8] J. Sumakeris, Z. Sitar, K.S. Ailey-Trent, K.L. More, R.F. Davis, Thin Solid Films 225, 244 (1993)
  • [9] O.H. Kim, D. Kim, T. Anderson, J. Vac. Sci. Technol. A 27, 923 (2009)
  • [10] V. Matolin, S. Fabik, J. Glosik, L. Bideux, Y. Ould-Metidji, B. Gruzza, Vacuum 76, 471 (2004)
  • [11] P. Kumar, M. Kumar, Govind, B.R. Mehta, S.M. Shivaprasad, Appl. Surf. Sci. 256, 517 (2009)
  • [12] D. Manova, V. Dimitrova, W. Fukarek, D. Karpuzov, Surf. Coat. Tech. 106, 205 (1998)
  • [13] C.C. Wang, M.C. Chiu, M.H. Shiao, F.S. Shieu, J. Electrochem. Soc. 151, F252 (2004)
  • [14] Z. Majlinger, A. Bozanic, M. Petravic, K.-J. Kim, B. Kim, Y.-W. Yang, Vacuum 84, 41 (2010)
  • [15] M. Drygas, R.T. Paine, J.F. Janik, Pol. J. Chem. Technol. 8, 60 (2006)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap16kz
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