Structural and Optical Behaviour οf~Ni Doped CdS Nanoparticles Synthesized by Chemical Co-Precipitation Method

• Authors: K. Siva Kumar , A. Divya , P. Sreedhara Reddy , S. Uthanna , R. Martins , E. Elangovan
• Languages of publication: EN

Abstracts

EN

Pure and Ni (2 at.%) doped cadmium sulfide (CdS) nanoparticles have been synthesized by chemical co-precipitation method at room temperature. Effect of Ni doping on CdS compound semiconductors has been analyzed using X-ray diffractometer, transmission electron microscope, energy dispersive spectroscopy, Raman and optical absorption studies. X-ray diffraction study confirmed the structure of the obtained nanoparticles to be single-phase zinc blende with the diffractions from (111), (220) and (311) planes. Energy dispersive spectroscopy study confirmed the presence of Ni in the CdS lattice. The average particle size obtained from the transmission electron microscopy studies are in agreement with the crystallite size calculated from X-ray diffraction data. The optical studies exhibited a clear red shift of absorption edge as a function of Ni doping.

Keywords

EN

61.05.Cp; 61.72.-y; 78.55.Et; 78.67.Bf

Discipline

• 78.67.Bf: Nanocrystals, nanoparticles, and nanoclusters
• 78.55.Et: II-VI semiconductors
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-52-A-54

Dates

published

2011-12

Contributors

author

K. Siva Kumar

• Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India

author

A. Divya

• Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India

author

P. Sreedhara Reddy

• Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India

author

S. Uthanna

• Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India

author

R. Martins

• CENIMAT/I3N, Departemento de Ciencia dos Materiais, Faculdade de Cienciase Technolgia, FCT, Universidade Nova de Lisboa and CEMOP/UNINOVA, 2829-516 Caparica, Portugal

author

E. Elangovan

• CENIMAT/I3N, Departemento de Ciencia dos Materiais, Faculdade de Cienciase Technolgia, FCT, Universidade Nova de Lisboa and CEMOP/UNINOVA, 2829-516 Caparica, Portugal

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Identifiers

DOI

10.12693/APhysPolA.120.A-52