Substrate Temperature Influenced Structural and Electrical Behaviour of~RF Magnetron Sputtered Ag_2Cu_2O_3 Films

• Authors: A. Sreedhar , M. Hari Prasad Reddy , S. Uthanna , R. Martins , E. Elangovan , J. Pierson
• Languages of publication: EN

Abstracts

EN

Ag_2Cu_2O_3 films were deposited on glass and silicon substrates by RF magnetron sputtering of metallic equimolar (Ag_{50}Cu_{50}) alloy target in Ar-O_{2} mixture at different substrate temperature (T_{s}) ranging between 303 and 523 K. The effect of T_{s} on the core level binding energies, structural and electrical properties of the films was systematically studied. The films deposited at room temperature were amorphous. The films deposited at 373 K were polycrystalline and the crystallinity was increased when the T_{s} was increased to 423 K. The films deposited at 423 K and subsequently annealed at 498 K exhibits single phase Ag_2Cu_2O_3. In the case of films deposited at higher T_{s} of 523 K, Ag_2O was decomposed into Ag. The electrical resistivity of the films deposited at 303 K was 1.2 × 10^{-5} Ω cm, whereas the films formed at 423 K and subsequently annealed at 498 K showed electrical resistivity of 2.2 × 10^{-3} Ω cm due to improvement in the crystallinity of single phase Ag_2Cu_2O_3.

Keywords

EN

71.20.-b; 71.15.Mb; 78.20.Ci; 74.25.Gz

Discipline

• 71.20.-b: Electron density of states and band structure of crystalline solids
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 74.25.Gz: Optical properties
• 71.15.Mb: Density functional theory, local density approximation, gradient and other corrections

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-37-A-39

Dates

published

2011-12

Contributors

author

A. Sreedhar

• Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India

author

M. Hari Prasad Reddy

• Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India

author

S. Uthanna

• Department of Physics, Sri Venkateswara University, Tirupati - 517 502, India

author

R. Martins

• CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica, Portugal

author

E. Elangovan

• CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, 2829-516 Caparica, Portugal

author

J. Pierson

• Institut Jean Lamour (UMR CNRS 7198), Department CP2S, Ecole des Mines, Nancy Université, 54042 Nancy cedex, France

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Identifiers

DOI

10.12693/APhysPolA.120.A-37