A Photoacoustic Study of Xenon Implantation in CuInSe_2

• Authors: F. Satour , A. Zegadi , A. Merabet
• Languages of publication: EN

Abstracts

EN

In this paper, we report a study on the optical properties of xenon ion implanted CuInSe_2 single crystals using a high resolution near-infrared photoacoustic spectrometer of the gas-microphone type. Samples of high quality of CuInSe_2, p-type conducting, have been implanted with Xe^{+} at 40 keV with doses of 5 × 10^{15}, 10^{16} and 5 × 10^{16} ions/cm^2. Photoacoustic spectra have been measured before and after implantation. A newly developed theoretical model based on a two-layer sample configuration has been used to single out the spectral dependence of the absorption coefficient of the implanted layer from that of the substrate. The absorption spectra were used to evaluate the gap energy and to establish ionization energies for several shallow and deep defect states. The resulting effects following the introduction of xenon into CuInSe_2 at different doses are discussed in the light of published literature.

Keywords

EN

81.70.Cv; 78.20.Ci; 78.40.Fy; 61.82.Fk; 71.55.-i

Discipline

• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 78.40.Fy: Semiconductors
• 71.55.-i: Impurity and defect levels
• 61.82.Fk: Semiconductors
• 81.70.Cv: Nondestructive testing: ultrasonic testing, photoacoustic testing

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-31-A-33

Dates

published

2011-12

Contributors

author

F. Satour

• LCCNS, Département d'Electronique, Faculté de Technologie, Université Ferhat Abbas - Sétif, Sétif 19000, Algeria

author

A. Zegadi

• LCCNS, Département d'Electronique, Faculté de Technologie, Université Ferhat Abbas - Sétif, Sétif 19000, Algeria

author

A. Merabet

• LPMMM, I.O.M.P., Université Ferhat Abbas - Sétif, Sétif 19000, Algeria

References

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Identifiers

DOI

10.12693/APhysPolA.120.A-31