PL EN


Preferences help
enabled [disable] Abstract
Number of results
2011 | 120 | 6A | A-25-A-27
Article title

Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method

Content
Title variants
Languages of publication
EN
Abstracts
EN
Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
Keywords
EN
Contributors
author
  • Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
author
  • Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
author
  • Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
author
  • Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
author
  • Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
author
  • Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
author
  • Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
author
  • Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
author
  • Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
References
  • [1] N. Ohtani, M. Katsuno, T. Fujimoto, H. Yashiro, in: Silicon Carbide, Recent Major Advances, Eds. W.J. Choyke, H. Matsunami, G. Pensl, Springer, Berlin 2003, p. 137
  • [2] N. Zhang, Y. Chen, E.K. Sanchez, D.R. Black, M. Dudley, Mater. Sci. Forum 615-617, 209 (2009)
  • [3] Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, Y. Kawai, N. Shibata, T. Hirayama, Y. Ikuhara, Mater. Sci. Forum 645-648, 351 (2010)
  • [4] Y. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai, N. Shibata, Mater. Sci. Forum 679-680, 294 (2011)
  • [5] Y. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai, N. Shibata, Jpn. J. Appl. Phys. 50, 075502 (2011)
  • [6] M. Katsuno, N. Ohtani, J. Takahashi, H. Yashiro, M. Kanaya, Jpn. J. Appl. Phys. 38, 4661 (1999)
  • [7] S.A. Sakwe, R. Müller, P.J. Wellmann, J. Cryst. Growth 289, 520 (2006)
  • [8] D. Siche, D. Klimm, T. Hölzel, A. Wohlfart, J. Cryst. Growth 270, 1 (2004)
  • [9] P. Wu, M. Yoganathan, I. Zwieback, Y. Chen, M. Dudley, Mater. Sci. Forum 600-603, 333 (2009)
  • [10] J. Takahashi, M. Kanaya, Y. Fujiwara, J. Cryst. Growth 135, 61 (1994)
  • [11] H. Tsuchida, I. Kamata, M. Nagano, J. Cryst. Growth 306, 254 (2007)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap06kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.