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2011 | 120 | 6A | A-25-A-27
Article title

Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method

Content
Title variants
Languages of publication
EN
Abstracts
EN
Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
Keywords
EN
Year
Volume
120
Issue
6A
Pages
A-25-A-27
Physical description
Dates
published
2011-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap06kz
Identifiers
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