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Abstracts
Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
Discipline
Journal
Year
Volume
Issue
Pages
A-25-A-27
Physical description
Dates
published
2011-12
Contributors
author
- Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
author
- Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
author
- Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
author
- Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
author
- Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
author
- Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
author
- Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
author
- Toyota Motor Corporation, 1200 Mishuku, Susono, Shizuoka 410-1193, Japan
author
- Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya 456-8587, Japan
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap06kz