High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

• Authors: A. Taube , R. Kruszka , M. Borysiewicz , S. Gierałtowska , E. Kamińska , A. Piotrowska
• Languages of publication: EN

Abstracts

EN

The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with SiO_2 and HfO_2/SiO_2 gate stacks. From the Terman method low density of interface traps (D_{it} ≈ 10^{11} eV^{-1} cm^{-2}) at SiO_2/GaN interface was calculated for as-deposited samples. Samples with HfO_2/SiO_2 gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of SiO_2/GaN interface shows applicability of SiO_2 as a gate dielectric in GaN MOSFET transistors.

Keywords

EN

77.55.dj; 77.22.Ch; 73.40.Qv; 81.15.Gh; 81.15.Cd

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 77.22.Ch: Permittivity (dielectric function)(for low-permittivity dielectric films, see 77.55.Bh; for high-permittivity gate dielectric films, 77.55.D-)
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 81.15.Cd: Deposition by sputtering
• 77.55.dj: For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-22-A-24

Dates

published

2011-12

Contributors

author

A. Taube

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

author

R. Kruszka

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Borysiewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

S. Gierałtowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

References

• [1] J. Szmidt, Elektronika 9, 5 (2006)
• [2] J.W. Chung, W.E. Hoke, E.M. Chumbes, T. Palacios, IEEE Electron Device Lett. 31, 195 (2010)
• [3] J.-C. Gerbedoen, A. Soltani, S. Joblot, J.-C. De Jaeger, C. Gaquière, Y. Cordier, F. Semond, IEEE Trans. Electron Dev. 57, 1497 (2010)
• [4] Y. Cai, Z. Cheng, W.Ch.W. Tang, K.M. Lau, K.J. Chen, IEEE Trans. Electron Dev. 53, 2223 (2006)
• [5] Sh. Jia, Y. Cai, D. Wang, B. Zhang, K.M. Lau, K.J. Chen, Phys. Status Solidi C 3, 2368 (2006)
• [6] R. Chu, Ch.S. Suh, M.H. Wong, N. Fichtenbaum, D. Brown, L. McCarthy, S. Keller, F. Wu, J.S. Speck, U.K. Mishra, IEEE Electron Device Lett. 28, 781 (2007)
• [7] W. Huang, T. Khan, T.P. Chow, IEEE Electron Dev. Lett. 27, 796 (2006)
• [8] W. Huang, T.P. Chow, Y. Niiyama, T. Nomura, S. Yoshida, IEEE Electron Dev. Lett. 30, 1018 (2009)
• [9] H. Otake, K. Chikamatsu, A. Yamaguchi, T. Fujishima, H. Ohta, Appl. Phys. Express 1, 011105 (2008)
• [10] M. Kodama, M. Sugimoto, E. Hayashi, N. Soejima, O. Ishiguro, M. Kanechika, K. Itoh, H. Ueda, T. Uesugi, T. Kachi, Appl. Phys. Express 1, 021104 (2008)
• [11] K. Yamaji, M. Noborio, J. Suda, T. Kimoto, Jpn. J. Appl. Phys. 47, 7784 (2008)
• [12] Y. Niiyama, T. Shinagawa, Sh. Ootomo, H. Kambayashi, T. Nomura, S. Yoshida, Phys. Status Solidi A 204, 2032 (2007)
• [13] A. Taube, M.Sc. Thesis, Warsaw University of Technology, Warsaw 2011
• [14] K.Y. Cheong, J.H. Moon, D. Eom, H.J. Kim, W. Bahng, N.-K. Kim, Electrochem. Solid State Lett. 10, H69 (2007)
• [15] M. Grundmann, The Physics of Semiconductors, Springer, Berlin 2006
• [16] A. Taube, S. Gierałtowska, T. Gutt, T. Małachowski, I. Pasternak, T. Wojciechowski, W. Rzodkiewicz, M. Sawicki, A. Piotrowska, Acta Phys. Pol. A 119, 696 (2011)
• [17] L.M. Terman, Solid-State Electron. 5, 285 (1962)

Identifiers

DOI

10.12693/APhysPolA.120.A-22