High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor

• Authors: A. Taube , R. Kruszka , M. Borysiewicz , S. Gierałtowska , E. Kamińska , A. Piotrowska
• Languages of publication: EN

Abstracts

EN

The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with SiO_2 and HfO_2/SiO_2 gate stacks. From the Terman method low density of interface traps (D_{it} ≈ 10^{11} eV^{-1} cm^{-2}) at SiO_2/GaN interface was calculated for as-deposited samples. Samples with HfO_2/SiO_2 gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of SiO_2/GaN interface shows applicability of SiO_2 as a gate dielectric in GaN MOSFET transistors.

Keywords

EN

77.55.dj; 77.22.Ch; 73.40.Qv; 81.15.Gh; 81.15.Cd

Discipline

• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 77.22.Ch: Permittivity (dielectric function)(for low-permittivity dielectric films, see 77.55.Bh; for high-permittivity gate dielectric films, 77.55.D-)
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 81.15.Cd: Deposition by sputtering
• 77.55.dj: For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)

• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-22-A-24

Dates

published

2011-12

Contributors

author

A. Taube

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

author

R. Kruszka

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

M. Borysiewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

S. Gierałtowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Kamińska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

A. Piotrowska

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.A-22