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Abstracts
The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with SiO_2 and HfO_2/SiO_2 gate stacks. From the Terman method low density of interface traps (D_{it} ≈ 10^{11} eV^{-1} cm^{-2}) at SiO_2/GaN interface was calculated for as-deposited samples. Samples with HfO_2/SiO_2 gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of SiO_2/GaN interface shows applicability of SiO_2 as a gate dielectric in GaN MOSFET transistors.
Discipline
- 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
- 77.22.Ch: Permittivity (dielectric function)(for low-permittivity dielectric films, see 77.55.Bh; for high-permittivity gate dielectric films, 77.55.D-)
- 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
- 81.15.Cd: Deposition by sputtering
- 77.55.dj: For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)
Journal
Year
Volume
Issue
Pages
A-22-A-24
Physical description
Dates
published
2011-12
Contributors
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
- Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
author
- Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap05kz