Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

• Authors: T. Krajewski , G. Luka , P. Smertenko , A. Zakrzewski , K. Dybko , R. Jakiela , L. Wachnicki , S. Gieraltowska , B. Witkowski , M. Godlewski , E. Guziewicz
• Languages of publication: EN

Abstracts

EN

The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.

Keywords

EN

68.55.ag   73.50.-h   73.50.Bk   73.61.Ga   81.15.-z   81.15.Gh  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-17-A-21

Dates

published

2011-12

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Identifiers

DOI

10.12693/APhysPolA.120.A-17