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2011 | 120 | 6A | A-17-A-21
Article title

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

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EN
Abstracts
EN
The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Keywords
Year
Volume
120
Issue
6A
Pages
A-17-A-21
Physical description
Dates
published
2011-12
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap04kz
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