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2011 | 120 | 6A | A-17-A-21
Article title

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

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The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Physical description
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