Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

• Authors: Z. Zytkiewicz , P. Dluzewski , J. Borysiuk , M. Sobanska , K. Klosek , B. Witkowski , M. Setkiewicz , T. Pustelny
• Languages of publication: EN

Abstracts

EN

We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.

Keywords

EN

81.15.Hi; 81.05.Dz; 61.46.Km

Discipline

• 61.46.Km: Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 81.05.Dz: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-15-A-16

Dates

published

2011-12

Contributors

author

Z. Zytkiewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Dluzewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Borysiuk

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Sobanska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Klosek

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

B. Witkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Setkiewicz

• Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

author

T. Pustelny

• Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland

References

• [1] A. Le Louarn, S. Vezian, F. Semond, J. Massies, J. Cryst. Growth 311, 3278 (2009)
• [2] J. Ristic, E. Calleja, S. Fernandez-Garrido, L. Cerutti, A. Trampert, U. Jahn, K.H. Ploog, J. Cryst. Growth 310, 4035 (2008)
• [3] T. Pustelny, E. Maciak, Z. Opilski, M. Bednorz, Opt. Appl. 37, 187 (2007)

Identifiers

DOI

10.12693/APhysPolA.120.A-15