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Abstracts
We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.
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Journal
Year
Volume
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Pages
A-15-A-16
Physical description
Dates
published
2011-12
Contributors
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
author
- Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland
author
- Silesian University of Technology, Akademicka 2, 44-100 Gliwice, Poland
References
- [1] A. Le Louarn, S. Vezian, F. Semond, J. Massies, J. Cryst. Growth 311, 3278 (2009)
- [2] J. Ristic, E. Calleja, S. Fernandez-Garrido, L. Cerutti, A. Trampert, U. Jahn, K.H. Ploog, J. Cryst. Growth 310, 4035 (2008)
- [3] T. Pustelny, E. Maciak, Z. Opilski, M. Bednorz, Opt. Appl. 37, 187 (2007)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap03kz