Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Z. Zytkiewicz; P. Dluzewski; J. Borysiuk; M. Sobanska; K. Klosek; B. Witkowski; M. Setkiewicz; T. Pustelny

doi:10.12693/APhysPolA.120.A-15

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Acta Physica Polonica A

2011 | 120 | 6A | A-15-A-16

Article title

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Authors

Z. Zytkiewicz , P. Dluzewski , J. Borysiuk , M. Sobanska , K. Klosek , B. Witkowski , M. Setkiewicz , T. Pustelny

Content

http://przyrbwn.icm.edu.pl/APP/PDF/120/a120z6ap03.pdf [remote]

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Abstracts

We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.

Keywords

81.15.Hi 81.05.Dz 61.46.Km

Publisher

Institute of Physics, Polish Academy of Sciences

Journal

Acta Physica Polonica A

Year

2011

Volume

120

Issue

Pages

A-15-A-16

Physical description

Dates

published

2011-12

References

[1] A. Le Louarn, S. Vezian, F. Semond, J. Massies, J. Cryst. Growth 311, 3278 (2009)
[2] J. Ristic, E. Calleja, S. Fernandez-Garrido, L. Cerutti, A. Trampert, U. Jahn, K.H. Ploog, J. Cryst. Growth 310, 4035 (2008)
[3] T. Pustelny, E. Maciak, Z. Opilski, M. Bednorz, Opt. Appl. 37, 187 (2007)

Document Type

Publication order reference

YADDA identifier

bwmeta1.element.bwnjournal-article-appv120n6ap03kz

Identifiers

DOI

10.12693/APhysPolA.120.A-15