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2011 | 120 | 6A | A-15-A-16
Article title

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Content
Title variants
Languages of publication
EN
Abstracts
EN
We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.
Keywords
EN
Year
Volume
120
Issue
6A
Pages
A-15-A-16
Physical description
Dates
published
2011-12
References
  • [1] A. Le Louarn, S. Vezian, F. Semond, J. Massies, J. Cryst. Growth 311, 3278 (2009)
  • [2] J. Ristic, E. Calleja, S. Fernandez-Garrido, L. Cerutti, A. Trampert, U. Jahn, K.H. Ploog, J. Cryst. Growth 310, 4035 (2008)
  • [3] T. Pustelny, E. Maciak, Z. Opilski, M. Bednorz, Opt. Appl. 37, 187 (2007)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv120n6ap03kz
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