Photoconductivity Study of Sputter-Deposited Cu_2O Films

• Authors: S. Bhattacharyya , D. Reppin , P. Sanguino , R. Ayouchi , A. Polity , R. Schwarz , D. Hofmann , B. Meyer
• Languages of publication: EN

Abstracts

EN

Cuprous oxide (Cu_2O) thin films were deposited by radio frequency sputtering technique on fused silica substrates. The X-ray diffraction study of the Cu_2O samples showed reflections from (111) and (200) planes of cubic Cu_2O. The samples were then annealed at 1008 K in nitrogen (N_2) atmosphere. Annealed samples indicated strain relaxation. The samples were then characterized optically by measuring the transmittance using an ultraviolet-visible-near infrared photospectrometer. The band gap of the as-deposited samples were found to be ≈ 2.1 eV, whereas the annealed samples had a band gap of ≈ 2.6 eV. The transient photocurrent decay measurements of the annealed films indicated slow non-exponential power law decays in several time windows, indicating multiple trapping of the carriers in the deep defects within the band gap. The steady-state photo and dark current measurement and persistent photocurrent (PPC) was carried out on the annealed samples. In general, the photocurrent was found to be much smaller than the dark current. The steady-state and transient photocurrent measurements were utilized to determine the carrier lifetime-mobility product, 〈μτ 〉 of the samples and to determine the carrier mobility, 〈μ 〉.

Keywords

EN

78.66.-w; 73.50.-h; 73.61.-r

Discipline

• 73.61.-r: Electrical properties of specific thin films(for optical properties of thin films, see 78.20.-e and 78.66.-w; for magnetic properties of thin films, see 75.70.-i)
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 73.50.-h: Electronic transport phenomena in thin films(for electronic transport in mesoscopic systems, see 73.23.-b; see also 73.40.-c Electronic transport in interface structures; for electronic transport in nanoscale materials and structures, see 73.63.-b)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-11-A-14

Dates

published

2011-12

Contributors

author

S. Bhattacharyya

• Dept. of Physics, Instituto Superior Técnico, Av. Rovisco Pais 1, P 1049-001 Lisbon, Portugal

author

D. Reppin

• I. Physikalisches Institut, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

author

P. Sanguino

• Dept. of Physics, Instituto Superior Técnico, Av. Rovisco Pais 1, P 1049-001 Lisbon, Portugal

author

R. Ayouchi

• Dept. of Physics, Instituto Superior Técnico, Av. Rovisco Pais 1, P 1049-001 Lisbon, Portugal

author

A. Polity

• I. Physikalisches Institut, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

author

R. Schwarz

• Dept. of Physics, Instituto Superior Técnico, Av. Rovisco Pais 1, P 1049-001 Lisbon, Portugal

author

D. Hofmann

• I. Physikalisches Institut, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

author

B. Meyer

• I. Physikalisches Institut, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

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Identifiers

DOI

10.12693/APhysPolA.120.A-11