Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application

• Authors: Ł. Wachnicki , A. Dużyńska , J. Domagala , B. Witkowski , T. Krajewski , E. Przeździecka , M. Guziewicz , A. Wierzbicka , K. Kopalko , S. Figge , D. Hommel , M. Godlewski , E. Guziewicz
• Languages of publication: EN

Abstracts

EN

Monocrystalline films of zinc oxide were grown at 300C by atomic layer deposition. ZnO layers were grown on various substrates like ZnO bulk crystal, GaN, SiC and Al_2O_3. Electrical properties of the films depend on structural quality. Structural quality, surface morphology and optical properties of ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence, respectively. High resolution X-ray diffraction spectra show that the rocking curve FWHM of the symmetrical 00.2 reflection equals to 0.058° and 0.009° for ZnO deposited on a gallium nitride template and a zinc oxide substrate, respectively. In low temperature photoluminescence sharp excitonic lines in the band-edge region with a FWHM equal to 4 meV, 5 meV and 6 meV, for zinc oxide deposited on gallium nitride, zinc oxide and sapphire substrate, respectively.

Keywords

EN

81.15.Aa; 61.05.cp; 81.05.Dz

Discipline

• 81.15.Aa: Theory and models of film growth
• 61.05.cp: X-ray diffraction
• 81.05.Dz: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6A
• Pages: A-7-A-10

Dates

published

2011-12

Contributors

author

Ł. Wachnicki

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Dużyńska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

J. Domagala

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

B. Witkowski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

T. Krajewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

E. Przeździecka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Guziewicz

• Institute of Electron Technology, al. Lotników 32/46,02-668 Warsaw, Poland

author

A. Wierzbicka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

K. Kopalko

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

author

S. Figge

• Institute of Solid State Physics, University of Bremen, Kufsteiner Str. 1, Bremen 28359, Germany

author

D. Hommel

• Institute of Solid State Physics, University of Bremen, Kufsteiner Str. 1, Bremen 28359, Germany

author

M. Godlewski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
• College of Science, Department of Mathematics and Natural Sciences, Cardinal Stefan Wyszynski University, Warsaw, Poland

author

E. Guziewicz

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.120.A-7