Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic Si_{0.8}Ge_{0.2} p-Channel MOSFETs

• Authors: G. Ansaripour
• Languages of publication: EN

Abstracts

EN

In this work we present an analytical model of the threshold voltage of SiGe p-channel metal oxide semiconductor field effect transistor based on the solution of the two-dimensional Poisson's equation and the ground state wave function of Fang and Howard, and taking into account the space charge in the channel and its effect on the surface potential. It is seen that the experimental data are well fitted within the experimental error that shows the appropriateness of the implemented model. Also comparing the calculated results to that of the calculated from the available recent reported models indicates a reasonable improvement to them.

Keywords

EN

73.23.-b

Discipline

• 73.23.-b: Electronic transport in mesoscopic systems

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2011
• Volume: 120
• Issue: 6
• Pages: 1043-1046

Dates

published

2011-12

received

2009-04-13

(unknown)

2011-06-10

Contributors

author

G. Ansaripour

• Department of Physics, Yazd University, P.O. Box 89195-741, Yazd, Iran

References

• 1. Y.-S. Jean, C.-Y. Wu, IEEE Trans. Electron Dev. 44, 441 (1997)
• 2. G. Braithwaite, N. Mattey, E.H.C. Parker, T.E. Whall, E. Brunthalter, G. Bauer, J. Appl. Phys. 81, 68531 (1997)
• 3. S. Kaya, Y.-P. Zhao, J.R. Waiting, A. Asenov, J.R. Barker, G. Ansaripour, G. Braithwaite, T.E. Whall, E.H.C. Parker, Semicond. Sci. Technol. 5, 573 (2000)
• 4. G. Ansaripour, G. Braithwaite, S. Agan, T.E. Whall, E.H.C. Parker, Microelectron. Eng. 51-52, 541 (2000)
• 5. G. Ansaripour, Thin Solid Films 517, 6105 (2009)
• 6. G. Ansaripour, Thin Solid Films 518, 5599 (2010)
• 7. J.A. Greenfield, R.W. Dutton, IEEE Trans. Electron. Dev. ED-27, 1520 (1980)
• 8. R.R. Troutman, S.N. Chakravart, IEEE Trans. Cir. Theor. CT-20, 659 (1973)
• 9. H. Masuda, M. Nakai, R. Hori, M. Kobo, Trans. IEEE Japan 60-C, 205 (1977)
• 10. S. Baishya, A. Mallik, C.K. Sarkar, Microelectron. Reliability 48, 17 (2008)
• 11. W. Wu, R. Yao, X. Zheng, Solid-State Electron. 53, 907 (2009)
• 12. X. Zou, J.P. Xu, C.X. Lee, P.T. Lai, W.B. Chen, Microelectron. Reliability 47, 391 (2007)
• 13. K.-Y. Lim, X. Zhou, Y. Wang, J. Model. Simul. Microstruct. 2, 51 (1999)
• 14. G. Ansaripour, Recent Res. Devel. Sci. Tech. Semicond. 1, 51 (2003)
• 15. D.R. Poole, D.L. Kwong, IEEE Electron. Dev. Lett. EDL-5, 443 (1984)
• 16. G.P. Kennedy, S. Taylor, W. Eccleston, W.M. Amoldbik, F.H.P.M. Habraken, Microelectron. Eng. 25, 141 (1984)
• 17. I.S. Goh, J.F. Zhang, S. Hall, W. Eccleston, K. Werner, Semicond. Sci. Technol. 10, 818 (1995)
• 18. R.J.P. Lander, C.J. Emeleus, B.M. McGregor, E.H.C. Parker, T.E. Whall, A.G.R. Evans, G.P. Kennedy, J. Appl. Phys. 82, 5210 (1997)
• 19. F.F. Fang, W.E. Howard, Phys. Rev. Lett. 16, 797 (1966)
• 20. L.D. Yau, Solid-State Electron. 17, 1059 (1974)
• 21. N.D. Arora, L.M. Richardson, MOSFET Modelling for Circuit Simulation: Advanced Device Physics, Academic Press Inc., New York 1989
• 22. H.M. Nayfeh, H. Hoyt, D.A. Antoniadis, IEEE Trans. Electron. Dev. 51, 2069 (2004)
• 23. G. Ansaripour, G. Braithwaite, M. Myronov, O.A. Mironov, E.H.C. Parker, T.E. Whall, Appl. Phys. Lett. 76, 1140 (2000)
• 24. M.A. Sadeghzadeh, A.I. Horrell, O.A. Mironov, E.H.C. Parker, T.E. Whall, M.J. Kearney, Appl. Phys. Lett. 76, 2568 (2000)

Identifiers

DOI

10.12693/APhysPolA.120.1043